( State Key Laboratory of Electronic Thin Films and Integrated Devices，University of Electronics Science and Technology of China，Chengdu 610054, China)
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DOI:
10.7502/j.issn.1674-3962.2013.02.05
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Abstract:
The significance of electronic materials was discussed in this paper. The status of the electronic materials and device industry status in China and the trend of development in the world was introduced. The studies of growth and properties of dielectric/GaN integrated films by our group were presented. The compatibility growth method was established by using TiO 2/MgO bi layer buffer, in which TiO 2 induces the epitaxial growth and MgO acts as diffusion barrier. It was found that the method can prevent the performance degradation of semiconductor and decrease the interface state density. Various new devices, including enhancementmode GaN HEMT, high off state breakdown voltage GaN HEMT, microwave capacitors, varactors, voltage controlled oscillators and mixers have been developed.