1.School of Physical Science and Electronics, Shanxi Datong University,Datong,037009 china 2.Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education,Taiyuan University of Technology, Taiyuan, 030024, China；3. Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan, 030024, China; 4. The College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024,China；
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DOI:
10.7502/j.issn.1674-3962.2015.05.02
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Abstract:
On the basis of a traditional phosphorescent organic light emitting device (PHOLED) with the structure of of ITO / NPB / CBP+Ir ( ppy ) 3 / liF / Al , with CBP ( 4, 4 ’ - N, N ’ - two carbazole biphenyl ) as the host material, Ir (ppy) 3 ( three ( 2 - phenyl pyridine ) Iridium ) as phosphorescent dopant, NPB as a hole transport layer. Where concavo-convex shape was constructed at the NPB/CBP:Ir(ppy)3 interface, the different concave -convex emitting layer phosphorescent device of NPB / CBP+ Ir ( ppy )3interface is studied, and use the current density -voltage -brightness concavo-convex efficiency - voltage curve analysis device interface charge trapping and injected charge dynamics, determine the optimal concavo-convex number of light emitting layer, when the convex number is 3, the maximum current efficiency of this device is 22cd/A, and was 26% higher than traditional structure device.