Center for Condensed Matter and Materials Physics, Department of Physics, Beihang University
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DOI:
10.7502/j.issn.1674-3962.2015.07.07
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Abstract:
The Mn3Zn1-xSnxN (x=0.05, 0.1, 0.15, 0.2, 0.3) compounds were synthesized by a solid-state reaction method. The effects of Sn doping on the thermal expansion behavior and electronic transport properties were investigated in these compounds. The transition temperature will increase and the difference of the volume do not change as the doping of Sn. When x=0.3, the negative thermal expansion behavior occurs at room temperature indicating that the range of the low thermal expansion (LTE) broadening to room temperature with the coefficient of thermal expansion in this range increasing from 2.35 to 8.66 × 10-6 /K. However, Sn doping can change the electro interaction at low temperature in Mn3Zn1-xSnxN compounds. With increasing Sn content, the multiple unusual minima behavior are disappeared, while the electro-electro interactions are increased to suggest a highly correlated Fermi liquid behavior in x=0.2 and 0.3 compounds. The abundant thermal expansion and electronic transport properties make this serial compounds necessary for the interesting physical mechanism and potential applications.