The traditional charge-based nonvolatile memory technology is hardly satisfying to the tremendous storage requirement of mass data information in the big data era. Hence, it is urgent to develop nonvolatile storage technology based on new materials and mechanisms.Resistive Random Access Memory (RRAM), based on electrochemical metallization effect, is considered to be a strong competitor for the next generation nonvolatile memory due to its outstanding performance, including simple structure, fast speed, low power, excellent scalability and three-dimensions integration. However, some disadvantages such as the large dispersion of RRAM parameters and the unclear switching mechanism obstacle the real application of RRAM. Recently, the devices performance has been greatly improved by optimization of RRAM materials and device structure, and the microscopic mechanism of resistive switching has been deeply understood with advanced in-situ characterization techniques. In this review, we sum and discuss the recent research progress of cation-based RRAM from three aspects: material optimization, device structure design and physical mechanism illustration. Finally, we predict and outlook the future research direction and development trend of cation-based RRAM.