As a very popular material, molybdenum disulfide（MoS2） has attracted much attention due to its unique physical and chemical properties. Nano-MoS2 has great application value in optoelectronic devices, catalysis，lithium-ion batteries, supercapacitors, lubrication and other fields because of their excellent physical and chemical properties, such as adjustable band gap, huge specific surface area, abundant edge sites and good chemical stability．This article describes a method for depositing and growing MoS2 nanotubes on a silicon dioxide substrate. It is a chemical vapor deposition (CVD) method in which MoO3 powder and sulfur powder are used as reactants under argon protective gas atmosphere, and the reaction temperature is maintained at 750 ℃ in a tube furnace. The experimental samples are characterized by SEM, TEM, XRD and Raman. XRD and Raman characterization results reveal that the samples are bulk MoS2 with (002) orientation growth and crystal grain size of about 22 nm. In addition, according to the microstructures shown in the SEM and TEM images, the formation mechanism and growth process of MoS2 nanotubes are analyzed. It is considered that MoS2 is bent and stacked to reduce the structural energy during the growth process, and the angle of the growth direction of each layer of nanosheets stacked on the bent nanosheets is larger and larger due to the Van Der Waals force between the layers. When the growth angle reaches about 60°, MoS2 began to stack vertically along the axial direction, and finally formed a single-open tubular structure. This is a completely different growth method compared with traditional nanotube growth.