(1.Department of Physics，University of Science and Technology Beijing，Beijing 100083，China) (2.Beijing National Laboratory for Condensed Matter Physics, Institute of Physics，Chinese Academy of Sciences，Beijing 100190，China)
Antiferromagnetic materials exhibit zero or rather low moment, so it would not be affected by external magnetic field. Furthermore, they have advantages of lower power consumption and higher frequency response compared with ferromagnetic materials, which makes them have great potential applications in the field of spintronics. Hexagonal Mn3Z(Z=Ga, Ge, Sn) alloys, with both Kagome lattice and triangular antiferromagnetism, exhibit large anomalous Hall effect, topological Hall effect, spin Hall effect and anomalous Nernst effect. These effects involve the most advanced problems in condensed matter physics. The study of them can not only deepen the understanding of condensed matter magnetic physics, but also drive the development of antiferromagnetic spintronics. In this paper, the research progress in magnetic and transport properties are reviewed. The crystal structure and the special magnetic structure of Mn3Z alloys are introduced. The influence of the electronic structure on the transport properties is briefly analyzed. An overview of the excellent properties of the Mn3Z(Z=Ga, Ge, Sn) alloys and their research progress is given in relation to the experimentally reported magnetic and transport properties. An outlook is given for the topologically relevant transport properties of the Mn3Z alloys.