1. School of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, China 2. Aerospace Science and Technology Defense Technology Research and Experimental Center, Beijing 100854, China 3. Key Laboratory of Interface Science and Engineering in Advanced Materials Ministry of Education,Taiyuan University of Technology, Taiyuan 030024, China 4. College of Textile Engineering, Taiyuan University of Technology, Taiyuan 030024, China
Since the obvious progress of GaN-based semiconductor materials in epitaxial growth and epitaxial structure design, GaN-based green laser diode has been widely used in laser displays, optical fiber communication, biomedical instruments, optical data storage and other fields. The development and research progress of green laser diode were reviewed in this work. The key factors affecting the low output power, poor beam quality and poor reliability of GaN based green laser diodes and their solutions were described in detail. The photoelectric performance droop for GaN-based green laser diode with high In composition in quantum well were discussed. The challenges of achieving high performance green laser diode are poor quality of epitaxied materials, serious carrier leakage and low radiation recombination caused by strong polarization effect were summarized. The research emphasis and the future trend of smarter and more modular of GaN-based green laser diode were prospected.