1. Ningbo Institute of Materials Technology and Engineering of the Chinese Academy of Sciences, Ningbo 315201, China
2. School of Materials Science and Chemical Engineering, Ningbo University, Ningbo 315211, China
As an emerging ultrawide bandgap semiconductor, gallium oxide has great application potential in power electronic devices, solar-blind ultraviolet detectors and gas detectors, which has the advantages of wide bandgap, high breakdown voltage, high Baliga‘s figure of merit and good thermal stability. Firstly, the advantages of gallium oxide over other semiconductor materials are summarized, and the physical properties of different crystalline phases (α, β, γ, δ, ε, κ) of gallium oxide and their corresponding potential application directions are introduced. Secondly, the research status of n-type doping of gallium oxide is discussed in detail, including intrinsic defects, doping mechanism and transport modulation of Si, Ge, Sn and other high-valence dopants. Finally, current main problems of gallium oxide are discussed, including the difficulty of p-type doping and low intrinsic thermal conductivity, and the development forground of gallium oxide in the future is prospected.