The third generation semiconductor materials have excellent properties such as wide bandgap, high breakdown electric field and high thermal conductivity, which meet the performance requirements of high-power semiconductor dvices towards miniaturization, high performance, high packing density and high reliability. However, the traditional thermal interface materials can no longer meet the high heat dissipation requirements of the devices, so it is urgent to study a new type of thermal interface materials that matches it. A kind of nano-silver paper with high purity, high thermal conductivity and high strength was prepared from uniformly dispersed silver nanowire solution by wet papermaking technology. The thermal conductivity and shear strength of nanosilver paper after hot-pressing sintering were studied, and the micromorphology and shear fracture morphology of the nanosilver paper after hot-pressing sintering were analyzed. The results show that the nanosilver paper has compact structure at the hot-pressing sintering process of 250 ℃/10 MPa/10 min, porosity is less than 5%, thermal resistance is less than 0.8 mm2·K·W-1, the room temperature shear strength with the substrate is 39 MPa, the shear strength at 400 ℃ is 13 MPa. As the low-temperature sintering (≤250 ℃) and wide-temperature range service (room temperature~800℃) new thermal interface material, nano-silver paper has a wide application prospect in the packaging of high-power semiconductor devices.