1. State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
2. School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
et al.
β-Ga2O3 is one of the ultra-wide band gap semiconductors and has broad prospects in electronic devices and deep ultraviolet electronic devices.Mechanical properties of β-Ga2O3 play an important role in the crystal growth, substrate machining and device fabrication. In this paper, the deformation mechanism of β-Ga2O3 at low and high temperatures are reviewed, including the slip systems of dislocations with dominance of plastic deformation and cleavage fracture mechanism. This review may help fully understanding the deformation behavior and mechanical mechanism of β-Ga2O3, and providing guidance for overcoming the problems related to deformation during β-Ga2O3 growing, machining and application. The removal mechanism and process exploration of β-Ga2O3 substrate machining, including the cutting, grinding and polishing, are introduced in detail. The main problems in the machining process and the solving direction are discussed.