[1]張大海,李仲平,范錦鵬.熱透波材料技術(shù)研究進(jìn)展[J].中國材料進(jìn)展,2012,(8):001-6.[doi:10.7502/j.issn.1674-3962.2012.08.01]
ZHANG Dahai,LI Zhongping,FAN Jinpeng.Review on the Research of High Temperature Wave Transparent Materials[J].MATERIALS CHINA,2012,(8):001-6.[doi:10.7502/j.issn.1674-3962.2012.08.01]
點擊復(fù)制
熱透波材料技術(shù)研究進(jìn)展(
)
中國材料進(jìn)展[ISSN:1674-3962/CN:61-1473/TG]
- 卷:
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- 期數(shù):
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2012年第8期
- 頁碼:
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001-6
- 欄目:
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特約研究論文
- 出版日期:
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2012-08-25
文章信息/Info
- Title:
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Review on the Research of High Temperature Wave Transparent Materials
- 作者:
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張大海; 李仲平; 范錦鵬
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（航天材料及工藝研究所 先進(jìn)功能復(fù)合材料科技重點實驗室，北京 100076）
- Author(s):
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ZHANG Dahai; LI Zhongping; FAN Jinpeng
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(National Key Laboratory of Advanced Functional Composite Materials, Aerospace Research Institute of Materials & Processing Technology, Beijing 100076, China)
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- 關(guān)鍵詞:
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熱透波材料; 熱電行為; 高溫電性能測試; 介電常數(shù); 介電損耗; 熱透波行為
- DOI:
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10.7502/j.issn.1674-3962.2012.08.01
- 文獻(xiàn)標(biāo)志碼:
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A
- 摘要:
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熱透波材料技術(shù)是高超聲速飛行器實現(xiàn)通訊與精確導(dǎo)航的關(guān)鍵技術(shù)，文章從熱透波材料體系、熱透波材料熱電行為和高溫電性能測試技術(shù)等方面對熱透波材料及其相關(guān)技術(shù)的發(fā)展現(xiàn)狀進(jìn)行了簡要介紹。在材料體系方面，石英陶瓷及二氧化硅基復(fù)合材料是目前應(yīng)用的主要材料品種，多孔氮化物陶瓷及陶瓷基復(fù)合材料是未來發(fā)展的重要方向。在熱電行為研究方面，對典型氧化物、氮化物、氮氧化物材料熱電行為規(guī)律及雜質(zhì)離子對材料熱電行為的影響等方面的研究獲得重要進(jìn)展，并獲得試驗驗證。在高溫電性能測試方面，近年來突破了1 600 ℃高溫寬頻測試關(guān)鍵技術(shù)，并獲得了氧化硅熔融態(tài)介電性能實測數(shù)據(jù)，國外和國內(nèi)已實現(xiàn)8 MW/m2熱透波實時測試。
- Abstract:
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The technique of high temperature wave transparent materials is the key technique for the communication and navigation of hypersonic vehicles. This paper reviews the research and developments of high temperature wave transparent materials and relative fields in recent years, including the material system, the high temperature dielectric properties and the high temperature dielectric parameters measurement. For material system, the quartz ceramics and quartz fiber reinforced composites are the main applicable materials so far; the porous nitride ceramics and composites will be an important development trend in the future. For the high temperature dielectric properties, the important progress and experimental verification have been made on the high temperature dielectric behaviors of typical oxides, nitrides and nitrogen oxide as well as the effects of impurities on dielectric properties. For the high temperature dielectric parameters measurement, the key technique of board band dielectric measurement from room temperature to 1 600 ℃ has been developed recently and the dielectric parameters of fusing silicon oxide have been successfully obtained for the first time. Moreover, the realtime measurements for high temperature wavetransparent properties under the condition of
8 MW/m2heat flux are achieved.
更新日期/Last Update:
2012-09-03