[1]李言榮,張萬里,劉興釗,等.集成電子薄膜材料研究進展[J].中國材料進展,2013,(2):045-50.[doi:10.7502/j.issn.1674-3962.2013.02.05]
LI Yanrong,ZHANG Wanli,LIU Xingzhao,et al.Recent Progress on Integrated Electronic Thin Films Materials[J].MATERIALS CHINA,2013,(2):045-50.[doi:10.7502/j.issn.1674-3962.2013.02.05]
點擊復制
集成電子薄膜材料研究進展(
)
中國材料進展[ISSN:1674-3962/CN:61-1473/TG]
- 卷:
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- 期數:
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2013年第2期
- 頁碼:
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045-50
- 欄目:
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特約研究論文
- 出版日期:
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2013-03-31
文章信息/Info
- Title:
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Recent Progress on Integrated Electronic Thin Films Materials
- 作者:
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李言榮; 張萬里; 劉興釗; 朱〓俊; 閆裔超
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(電子科技大學 電子薄膜與集成器件國家重點實驗室，四川 成都 610054)
- Author(s):
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LI Yanrong; ZHANG Wanli; LIU Xingzhao; ZHU Jun; YAN Yichao
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( State Key Laboratory of Electronic Thin Films and Integrated Devices，University of Electronics Science and Technology of China，Chengdu 610054, China)
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- 關鍵詞:
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薄膜技術; 電子材料; 電子器件
- DOI:
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10.7502/j.issn.1674-3962.2013.02.05
- 文獻標志碼:
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A
- 摘要:
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首先分析了當前我國電子信息產業的現狀，特別是電子材料與元器件行業的狀況，結合國際上電子信息技術的發展趨勢，闡述了研究集成電子材料的重要意義。文章結合作者的工作主要介紹了介電/GaN集成電子薄膜生長控制與性能研究情況，采用TiO2（誘導層）/MgO（阻擋層）組合緩沖層的方法控制介電/GaN集成薄膜生長取向、界面擴散，保護GaN基半導體材料的性能，降低介電/GaN集成薄膜界面態密度，建立界面可控的相容性生長方法。通過集成結構的設計與加工，研制出介電增強型GaN HEMT器件、高耐壓GaN功率器件原型以及一體化集成的微波電容、變容管、壓控振蕩器、混頻器等新型元器件。
- Abstract:
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The significance of electronic materials was discussed in this paper. The status of the electronic materials and device industry status in China and the trend of development in the world was introduced. The studies of growth and properties of dielectric/GaN integrated films by our group were presented. The compatibility growth method was established by using TiO 2/MgO bi layer buffer, in which TiO 2 induces the epitaxial growth and MgO acts as diffusion barrier. It was found that the method can prevent the performance degradation of semiconductor and decrease the interface state density. Various new devices, including enhancementmode GaN HEMT, high off state breakdown voltage GaN HEMT, microwave capacitors, varactors, voltage controlled oscillators and mixers have been developed.
更新日期/Last Update:
2013-02-22