文章信息/Info

Title:

Effect of GaN—Based Film Materials on the Performance of Photoelectric Device

作者:

陳席斌1; 馬淑芳 2; 董海亮1; 梁 建1;  許并社1

1.太原理工大學新材料界面科學與工程教育部重點實驗室，山西 太原， 030024 2. 北京工業大學 激光工程研究院，北京 010100

Author(s):

CHEN Xibin1;  MA Shufang1; 2; DONG Hailiang1;  LIANG Jian1;  XU Binshe1

1. Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024,China 2. Institute of Laser Engineering, Beijing University of Technology, Beijing 010100, China

關鍵詞:

GaN; 正向電壓; 發光強度

DOI:

10.7502/j.issn.1674-3962.2015.05.01

文獻標志碼:

A

摘要:

采用金屬有機化學氣相沉積方法在藍寶石襯底上外延生長GaN基材料，設計并優化外延生長條件，探索單層N型GaN(N-GaN)、多量子阱（MQW）、電子阻擋層（P-AlGaN）、P型GaN(P-GaN)材料對發光二極管(LED)器件的光電性能的影響。通過X射線衍射儀（XRD）、電致發光譜(EL) 、光致發光譜（PL）等測試設備對外延片進行表征。結果表明：經優化Si摻N-GaN和壘層（QB），獲得較好的（102）、（002）半峰寬，正向電壓從4.05 V分別降至3.84 V、3.47 V，發光強度從5.68 mV提高到6.08 mV。然后對P型AlGaN層進行Mg摻雜優化，正向電壓下降至3.35 V，發光強度提高到6.14 mV。最后對P-GaN層進行了生長溫度及退火溫度的優化，結果發現正向電壓從3.35 V提高至3.41 V，發光強度提高至6.75 mV左右。全自動探針臺在測試電流是20 mA的條件下，對芯片的電壓和發光強度進行了測試，電壓大致從4.5 V降到3.8 V左右，下降了16％。發光強度大概從110 mcd提高到135 mcd，提高了20％左右。經實驗結果與理論綜合分析，解釋了N-GaN層和QB層Si摻，P-AlGaN 層Mg摻，P-GaN層生長溫度及活化溫度對正向電壓和亮度的影響，從而為高質量GaN薄膜材料外延生長及高性能的LED優化提供了更好的實驗指導與理論支持。

Abstract:

The epitaxial growth of GaN-based film materials on the sapphire substrate was processed by metal organic chemical vapor deposition method. The structure of epitaxial wafers was designed and epitaxial growth conditions on single N-type GaN (N-GaN), multiple quantum well (MQW), electron blocking layer (P-AlGaN) and P-type GaN (P-GaN) material were optimized. The epitaxial wafers were characterized by X-ray diffraction (XRD), electroluminescence (EL), photoluminescence (PL). Results show that the optimized Si doped N-GaN and quantum barrier (QB) layer could lead better half peak width of (102), (002), voltage increases from 4.05 V to 3.84 V, 3.47 V, and luminous intensity increases from 5.68 mV to 6.08 mV. Then, Mg doped P-AlGaN layer was optimized, voltage reduces to 3.35 V and luminous intensity increases to 6.14 mV. Finally, The optimization of the growth temperature and annealing temperature on P-GaN layer make voltage increase from 3.35 V to 3.41 V, and luminous intensity increase to 6.75 mV. The voltage and the luminous intensity of chips were tested by automatic probe test under the test current of 20 mA. After optimization, the voltage decreases from 4.5 V to 3.8 V roughly, fell by 16%. Luminous intensity increases from 110 mcd to 135 mcd, increasing by 20% . Then, combining the experimental results and the theories, the influence of the N-GaN layer , Si doped QB layer, Mg doped P-AlGaN layer, and the growth temperature and activation temperature of P-GaN layer on the voltage and brightness were analyzed. These results may provide a better experiment guidance and theoretical support for the growth of high quality GaN epitaxial thin film materials and the optimization of high performance LED device.