[1]史可文,孫瑩*,鄧司浩,等.Sn摻雜對Mn3Zn1-xSnxN化合物負(fù)熱膨脹行為和電輸運(yùn)性能的影響[J].中國材料進(jìn)展,2015,(7-8):026-30.[doi:10.7502/j.issn.1674-3962.2015.07.07]
Shi Kewen,Sun Ying*,DengSihao,et al.The effects of Sn doping on the negative thermal expansion and electronic transport properties in Mn3Zn1-xSnxN compounds[J].MATERIALS CHINA,2015,(7-8):026-30.[doi:10.7502/j.issn.1674-3962.2015.07.07]
點(diǎn)擊復(fù)制
Sn摻雜對Mn3Zn1-xSnxN化合物負(fù)熱膨脹行為和電輸運(yùn)性能的影響(
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中國材料進(jìn)展[ISSN:1674-3962/CN:61-1473/TG]
- 卷:
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- 期數(shù):
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2015年第7-8期
- 頁碼:
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026-30
- 欄目:
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特約研究論文
- 出版日期:
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2015-08-18
文章信息/Info
- Title:
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The effects of Sn doping on the negative thermal expansion and electronic transport properties in Mn3Zn1-xSnxN compounds
- 作者:
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史可文; 孫瑩*; 鄧司浩; 王蕾; 胡鵬偉; 王聰
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北京航空航天大學(xué)物理系 , 凝聚態(tài)物理與材料物理研究中心
- Author(s):
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Shi Kewen; Sun Ying*; DengSihao; Wang Lei; HuPengwei; Wang Cong
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Center for Condensed Matter and Materials Physics, Department of Physics, Beihang University
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- 關(guān)鍵詞:
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負(fù)熱膨脹' target="_blank" rel="external"> FONT-FAMILY: 宋體">負(fù)熱膨脹; 相變; 電阻率; 電子 FONT-FAMILY: " Calibri" " sans-serif" ">- 電子散射' target="_blank" rel="external"> FONT-FAMILY: 宋體">電子散射
- DOI:
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10.7502/j.issn.1674-3962.2015.07.07
- 文獻(xiàn)標(biāo)志碼:
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A
- 摘要:
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采用固相反應(yīng)法成功制備了Mn3Zn1-xSnxN(x=0.05, 0.1, 0.15,0.2,0.3)系列化合物,研究了Sn替代Zn對Mn3Zn1-xSnxN化合物的熱膨脹、熵變和電輸運(yùn)性能的影響。Mn3ZnN化合物在磁相變溫區(qū)以下具有低熱膨脹行為,隨著Sn摻雜量的增加,Mn3Zn1-xSnxN系列化合物的低膨脹溫區(qū)(LTE)逐漸提高到室溫以上。同時(shí),低膨脹溫區(qū)內(nèi)的線膨脹系數(shù)逐漸升高。然而,Sn含量的增加對磁相變附近的負(fù)熱膨脹行為未產(chǎn)生明顯的影響。電阻測量結(jié)果表明Mn3Zn1-xSnxN化合物低溫(50 K以下)電輸運(yùn)出現(xiàn)反常。隨著Sn含量的增加,Mn3Zn1-xSnxN化合物在低溫下出現(xiàn)的電阻率極小值現(xiàn)象逐漸減弱,最終在x=0.2處消失。擬合結(jié)果表明,該系列化合物中的電子-電子散射逐漸增強(qiáng),出現(xiàn)明顯的費(fèi)米液體行為。由于豐富的低膨脹性能和獨(dú)特的電輸運(yùn)性能,該化合物在功能材料領(lǐng)域?qū)⒕哂兄匾难芯績r(jià)值和應(yīng)用前景。
- Abstract:
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The Mn3Zn1-xSnxN (x=0.05, 0.1, 0.15, 0.2, 0.3) compounds were synthesized by a solid-state reaction method. The effects of Sn doping on the thermal expansion behavior and electronic transport properties were investigated in these compounds. The transition temperature will increase and the difference of the volume do not change as the doping of Sn. When x=0.3, the negative thermal expansion behavior occurs at room temperature indicating that the range of the low thermal expansion (LTE) broadening to room temperature with the coefficient of thermal expansion in this range increasing from 2.35 to 8.66 × 10-6 /K. However, Sn doping can change the electro interaction at low temperature in Mn3Zn1-xSnxN compounds. With increasing Sn content, the multiple unusual minima behavior are disappeared, while the electro-electro interactions are increased to suggest a highly correlated Fermi liquid behavior in x=0.2 and 0.3 compounds. The abundant thermal expansion and electronic transport properties make this serial compounds necessary for the interesting physical mechanism and potential applications.
更新日期/Last Update:
2015-06-29