文章信息/Info

Title:

 Effect of Si doping on the negative thermal expansion and magnetic properties of Mn3Zn0.6Ge0.4N

作者:

李少鵬1; 2; 譚杰1; 趙玉強(qiáng)1; 2; 王維1; 黃榮進(jìn)1; 李來風(fēng)1

1 中國(guó)科學(xué)院理化技術(shù)研究所，
2 中國(guó)科學(xué)院大學(xué)

Author(s):

LI Shaopeng1; 2;  TAN Jie1;  ZHAO Yuqiang1; 2;  WANG Wei1;  HUANG Rongjin1;  LI Laifeng1

關(guān)鍵詞:

Mn3Zn0.6Ge0.4N; Si摻雜; 放電等離子體燒結(jié); 負(fù)熱膨脹性能; 磁性能

DOI:

10.7502/j.issn.1674-3962.2015.07.05

文獻(xiàn)標(biāo)志碼:

A

摘要:

為了探究Si元素對(duì)反鈣鈦礦材料Mn3Zn0.6Ge0.4N的負(fù)熱膨脹和磁性能的影響，利用放電等離子體燒結(jié)法制備了一系列Si摻雜的Mn3Zn0.6SixGe0.4-xN（x=0、0.1、0.15、0.2）材料。材料的結(jié)構(gòu)通過多晶粉末X射線衍射進(jìn)行了表征，測(cè)試結(jié)果表明成功的制備了Mn3Zn0.6SixGe0.4-xN化合物（空間群Pm-3m）。然后，對(duì)Mn3Zn0.6SixGe0.4-xN進(jìn)行了熱膨脹性能的測(cè)試，發(fā)現(xiàn)隨著Si摻雜量的增加，樣品的負(fù)熱膨脹溫區(qū)的起始溫度向低溫移動(dòng)，而負(fù)熱膨脹溫區(qū)的寬度不變。Mn3Zn0.6SixGe0.4-xN的磁性能由物理性能測(cè)試系統(tǒng)（PPMS）進(jìn)行了測(cè)試，結(jié)果表明，摻雜Si元素之后，在370K附近的順磁-反鐵磁轉(zhuǎn)變完全消失。這與摻雜Si元素之后，負(fù)熱膨脹起始溫度迅速向低溫移動(dòng)的現(xiàn)象一致，證明負(fù)熱膨脹現(xiàn)象與磁轉(zhuǎn)變的緊密聯(lián)系。另外，Si摻雜使Mn3Zn0.6Ge0.4N在低溫階段出現(xiàn)自旋玻璃態(tài)現(xiàn)象，同時(shí)激發(fā)了樣品的低溫鐵磁性。

Abstract:

In order to explore the effect of Si doping on the negative thermal expansion (NTE) and magnetic properties of antiperovskite Mn3Zn0.6Ge0.4N, a series of Si-doping Mn3Zn0.6SixGe0.4-xN（x=0、0.1、0.15、0.2）materials were prepared by spark plasma sintering (SPS). The powder X-ray diffraction measurement was conducted in order to characterize the structures of the products, the results of which manifest that the products have the space group Pm-3m, indicating that the Mn3Zn0.6SixGe0.4-xN（x=0、0.1、0.15、0.2）materials were successfully synthesized. Furthermore, we characterized the thermal expansion property of Mn3Zn0.6SixGe0.4-xN and found that the starting temperature of NTE operation-temperature window shift toward low temperature. However, the width of NTE operation-temperature window was maintained after Si doping. The magnetic properties of Mn3Zn0.6SixGe0.4-xN were also measured by the physical property measurement system (PPMS), which shown that the paramagnetic (PM) to antiferromagnetic (AFM) transition around 370K disappeared after Si doping. This result coincide well with the low-temperature shift of NTE operation-temperature window, demonstrating the close correlations between NTE property and magnetic transition. Additionally, the spin-glass and ferromagnetic states occurred at low temperatures in Mn3Zn0.6Ge0.4N after Si doping.