文章信息/Info

Title:

Phase Transition Properties of Vanadium Dioxide Film and Research Progress of VO2 Thin Film
Fabrication and Application

作者:

李建國; 安忠維

西安近代化學研究所

Author(s):

LI Jianguo;   AN Zhongwei

Xi�餫n Modern Chemistry Research Institute

關鍵詞:

VO2薄膜; 相變溫度; 制備方法; 原子層沉積(ALD); 摻雜

DOI:

10.7502/j.issn.1674-3962.2015.11.09

文獻標志碼:

A

摘要:

二氧化釩(VO2)薄膜是一種新型功能材料，其在68 ℃附近可發生低溫半導體相與高溫金屬相(S-M)之間的可逆相變。伴隨晶體結構的轉變, VO2薄膜的電學、光學等物理性能發生突變，其性能的突變使得在熱、電開關以及光存儲方面有著廣泛的應用而受到國內外越來越多的學者進行研究。但是，氧化釩存在相態復雜，VO2穩定存在相態范圍狹窄，制備高純度的VO2薄膜是現階段國內外學者的研究重點。就近幾年國內外相關研究，闡述了VO2薄膜的基本相變特性，介紹了常規的VO2薄膜制備方法和新型的以原子層沉積(ALD)技術制備VO2薄膜的方法，總結了通過改變薄膜制備工藝以及摻雜工藝降低VO2薄膜相變溫度，進一步對VO2薄膜的應用方向、未來發展趨勢進行展望。

Abstract:

The film of VO2  is a new functional material，and it has a reversible transition between low-temperature semiconductor phase and high-temperature metal phase(S-M) at about 68 ℃. With the transition in crystal structure, the electrical and optical physical properties appear mutation. The properties of VO2 films are widely applied in the thermal, electrical switch and optical storage, more and more scholars at home and abroad are engaged in related research. However, vanadium oxide phase states are quite complex, VO2 stable phase is in a narrow range, so preparation of high purity VO2 films is the researches emphasis and difficulty for all researcher. According to the domestic and international research, this paper briefly reviews the basic properties, and introduces common methods and atomic layer deposition(ALD) technology for preparation of VO2 thin films. Then,it reviews the methods of changing the films preparation and doping process to reduce the phase transition temperature. Application and development trend of VO2 films are discussed.