文章信息/Info

Title:

Research on Bismuth Telluride Based Thermoelectric Semiconductor Crystals

作者:

李小亞; 陳炎; 郝峰; 包曄峰; 陳立東

中國科學院上海硅酸鹽研究所 高性能陶瓷與超微結構國家重點實驗室； 河海大學常州校區 機電學院

Author(s):

LI Xiaoya; CHEN Yan;  HAO Feng; BAO YeFeng; CHEN Lidong

State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics； School of Mechanical and Electrical Engineering, Hohai University

關鍵詞:

碲化鉍; 合金化摻雜; 熱電性能; 晶體生長; 空間微重力

Keywords:

Bismuth telluride;  Alloying and doping;  Thermoelectric properties;  Crystal growth;  Space microgravity

DOI:

10.7502/j.issn.1674-3962.2017.04.04

文獻標志碼:

A

摘要:

碲化鉍基熱電半導體是中低溫區高性能熱電轉換材料，在微電子、計算機以及航天等領域廣泛用于局部致冷與精確溫控，在工業余廢熱回收溫差發電等領域具有良好的應用前景。通過合金化和摻雜，可以增強聲子散射降低晶格熱導率，優化載流子濃度提高電性能，從而提高碲化鉍基材料的熱電性能。本文在簡述碲化鉍晶體結構和能帶結構基礎上，綜述了合金化和摻雜提高碲化鉍基半導體的熱電性能、碲化鉍基半導體晶體生長的方法及空間微重力對碲化鉍基晶體區熔生長的影響，并展望了利用天宮二號空間實驗室開展碲化鉍基晶體生長及其相關研究。

Abstract:

Bismuth telluride based thermoelectric semiconductors are high performance thermoelectric materials over the low to medium temperature range (~300 degree C), which have found important applications in local thermoelectric cooling and precise temperature control in the fields of micro-electronics, computer and aerospace, and have prospect in industrial waste heat recovery for thermoelectric generation. Alloying and doping are effective ways to improve thermoelectric properties of bismuth telluride by enhancing the phonon scattering to reduce the lattice thermal conductivity, and optimizing the carrier concentration to increase power factor. In this article, after brief introduction to the crystal structure and band structure of bismuth telluride, we reviewed the enhancement of thermoelectric properties of bismuth telluride by alloying and doping, the growth of the bismuth telluride crystals as well as the effect of space microgravity on the growth of bismuth telluride crystals by zone melting process. We also prospected the growth of a bismuth telluride based crystal on board the TG-2 Space Lab and its related research.