[1]游巧.鑄錠法中籽晶、成核點及坩堝底部設置方法專利技術綜述[J].中國材料進展,2017,(4):051-55.[doi:10.7502/j.issn.1674-3962.2017.04.10]
YOU Qiao.Effect of Seed, Nucleation, and Crucible Set-Up on Ingot Casting: Patents Review[J].MATERIALS CHINA,2017,(4):051-55.[doi:10.7502/j.issn.1674-3962.2017.04.10]
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鑄錠法中籽晶、成核點及坩堝底部設置方法專利技術綜述(
)
中國材料進展[ISSN:1674-3962/CN:61-1473/TG]
- 卷:
-
- 期數:
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2017年第4期
- 頁碼:
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051-55
- 欄目:
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前沿綜述
- 出版日期:
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2017-04-30
文章信息/Info
- Title:
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Effect of Seed, Nucleation, and Crucible Set-Up on Ingot Casting: Patents Review
- 作者:
-
游巧
-
國家知識產權局專利局專利審查協作江蘇中心
- Author(s):
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YOU Qiao
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Patent Examination Cooperation Jiangsu Center of the Patent Office
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- 關鍵詞:
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鑄錠法; 硅; 晶體; 成核; 籽晶; 坩堝
- Keywords:
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ingot casting; silicon; crystal; nucleation; seed; crucible
- DOI:
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10.7502/j.issn.1674-3962.2017.04.10
- 文獻標志碼:
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A
- 摘要:
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近年來,隨著太陽能電池技術在中國的迅猛發展,晶體硅制造技術也逐漸發展起來。鑄錠法作為晶體硅的主要制備方法之一,其發展方向受到了國內外的普遍關注。本文在調研大量國內外相關專利技術的基礎上,綜述了近幾十年來國內外研究機構在鑄錠法制備晶體硅方面所采用的技術手段,主要歸類為以下三個方面:籽晶、成核點和坩堝底部設置。通過對比國內外技術以及分析國內重要申請人的專利申請,尋找國內外技術差距和國內技術演進方向,在如何調節晶粒生長速度、降低晶體的缺陷密度、提高晶體質量以適應太陽能電池的制造等亟需解決的技術問題方面提出一些方案。
- Abstract:
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The manufacturing techniques of the silicon crystal has aroused great attention accompanying with the rapid development of the solar cell in China in recent years. As one of the important synthetic methods of silicon crystal, the silicon ingot casting method becomes hot research topics. Here, by analyzing the relevant patents technologies from the worldwide, we review the silicon ingot casting techniques developed by different research institutes from three aspects: seed, nucleation and set-up of the crucible. We compare the different techniques between different research groups in China and other nations, and propose possible ways for the manufacturing issues in the solar cells, including the development of the adjustment of grain growth rate, reduction of defects concentration in crystals and improvement of crystal quality.
更新日期/Last Update:
2017-05-08