[1]張國君,關(guān)志良,李嬌,等.Cu/Zr納米多層膜的調(diào)制結(jié)構(gòu)與電阻率[J].中國材料進展,2017,(5):026-30.[doi:10.7502/j.issn.1674-3962.2017.05.05]
ZHANG Guojun,GUAN Zhiliang,LI Jiao,et al.Study on Modulation Structure and Resistivity of Nanostructured Cu/Zr Metallic Multilayers[J].MATERIALS CHINA,2017,(5):026-30.[doi:10.7502/j.issn.1674-3962.2017.05.05]
點擊復(fù)制
Cu/Zr納米多層膜的調(diào)制結(jié)構(gòu)與電阻率(
)
中國材料進展[ISSN:1674-3962/CN:61-1473/TG]
- 卷:
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- 期數(shù):
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2017年第5期
- 頁碼:
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026-30
- 欄目:
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特約研究論文
- 出版日期:
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2017-05-31
文章信息/Info
- Title:
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Study on Modulation Structure and Resistivity of Nanostructured Cu/Zr Metallic Multilayers
- 作者:
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張國君; 關(guān)志良; 李嬌; 王濤; 張金鈺
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西安理工大學材料科學與工程學院,西安交通大學金屬材料強度國家重點實驗室
- Author(s):
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ZHANG Guojun; GUAN Zhiliang; LI Jiao; WANG Tao; ZHANG Jinyu
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School of Materials Science and Engineering, Xi’an University of Technology;State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University
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- 關(guān)鍵詞:
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納米多層膜; 晶界; 界面; 電阻率
- Keywords:
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nanostructured multilayers; grain boundary; interface; resistivity
- DOI:
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10.7502/j.issn.1674-3962.2017.05.05
- 文獻標志碼:
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A
- 摘要:
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采用磁控濺射技術(shù)在單晶硅片上制備了恒定調(diào)制周期 (λ=25,40 nm)、不同調(diào)制比(η=0.1~10.5)的Cu/Zr納米多層膜。分別通過透射電子顯微鏡研究分析Cu/Zr多層膜的微觀結(jié)構(gòu),通過四探針測量法系統(tǒng)研究Cu/Zr多層膜電阻率的尺寸效應(yīng)。微觀結(jié)構(gòu)分析表明:Cu/Zr多層膜呈現(xiàn)周期性層狀結(jié)構(gòu),層界面清晰。調(diào)制周期與調(diào)制比均顯著影響Cu/Zr多層膜的電阻率(ρ)。相同調(diào)制周期下,η大于臨界調(diào)制比(ηC≈1)時,ρ幾乎與η無關(guān); 而η小于此臨界調(diào)制比(ηC≈1)時,ρ隨η減小急劇增大。利用Fuchs-Sondheimer和Mayadas-Shatzkes (FS-MS)傳輸模型可以對實驗數(shù)據(jù)進行很好的擬合,擬合結(jié)果表明:當η > ηC時,晶界散射和界面散射協(xié)同作用是Cu/Zr多層膜電阻率變化的主控機制;當η < ηC時,晶界散射成為多層膜電阻率變化的主導(dǎo)因素。
- Abstract:
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The Cu/Zr nanostructured metallic multilayers with constant modulation periods (λ = 25, 40 nm), covering a wide range of modulation ratio η spanning from 0.1 to 10.5, were deposited on the Si substrate by DC magnetron sputtering. By using the transmission electron microscopy and the four point probe method, the microstructure and size effects on the electrical resistivity (ρ) of Cu/Zr nanostructured multilayers were systematically investigated. It is revealed from the microstructural analysis that the modulation structure of Cu/ Zr metallic multilayers is clear and the interfaces are distinguishable. Both the modulation periods λ and the modulation ratio η significantly influence the resistivity ρ of Cu/Zr multilayers. The smaller is the modulation periods λ, the greater is the resistivity ρ. Above a critical modulation ratio (ηC≈1) the resistivity is independent on the modulation ratio, below which the resistivity sharply increases with decreasing the modulation ratio. The combined Fuchs-Sondheimer and Mayadas-Shatzkes (FS-MS) model can be used to fit the experimental data well. It is found that when η>ηC, the resistivity of Cu/Zr multilayers is determined by the cooperative effect of grain boundary scattering and interface scattering; When η
更新日期/Last Update:
2017-06-01