文章信息/Info

Title:

Spin gapless semiconductors based on Heusler alloys

 

作者:

徐桂舟1; 徐鋒1; 王文洪2

 (1南京理工大學,江蘇 南京 210094)
(2中國科學院物理研究所 北京凝聚態物理國家實驗室, 北京 100190)

Author(s):

 Xu Guizhou;  Xu Feng;  Wang Wenhong

 (1. Nanjing University of Science and Technology, Nanjing 210094, China)
  (2. Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China)

關鍵詞:

Heusler合金; 自旋零能隙半導體; 磁電阻; 半金屬; 自旋注入

Keywords:

Heusler alloys;  spin gapless semiconductor;  magnetoresistance;  half metal;  spin injection

DOI:

10.7502/j.issn.1674-3962.2017.09.02

文獻標志碼:

A

摘要:

自旋零能隙半導體是一類具有接近100%的高自旋極化率，同時與工業半導體具有良好兼容特性的新型自旋電子學材料，在自旋注入、自旋晶體管中具有潛在應用前景。本文從理論計算的電子結構，結合實驗的磁性、輸運性質能方面對包括Hg2CuTi型，LiMgPdSn四元等比型的Heusler自旋零能隙半導體及其研究進展進行了概述。闡明了Heusler合金中自旋零能隙半導體形成的機制和經驗規律，揭示出原子有序、組分調制對自旋零能隙半導體性質的影響。通過對基于Heusler自旋零能隙半導體的自旋注入體系的構建，展望了自旋零能隙半導體的發展趨勢和潛在應用。

Abstract:

Spin gapless semiconductors are new class of spintronic materials characterized with nearly fully spin polarization and good compatibilities with the existence semiconductor industry. We reviewed the recent advances of Heusler spin gapless semiconductors, including Hg2CuTi and LiMgPdSn types, from the aspects of first principles calculations and experimental magneto transport properties. We try to illustrate the mechanism and rule guiding for the formation of spin gapless semiconductors in Heulser alloys, and uncover the affect by the atomic order and composition adjust. By constructing the spin injection scheme based on the Heusler spin gapless semiconductor, we give outlook for their development and potential applications.