[1]宋曉琳,陳貴鋒,關(guān)麗秀,等.MoS2為基納米復(fù)合材料的制備及性能研究進(jìn)展[J].中國材料進(jìn)展,2017,(12):031-35.[doi:10.7502/j.issn.1674-3962.2017.12.07]
Song Xiaolin,Chen Guifeng,Guan Lixiu,et al.Review on preparation and properties of MoS2 based nanocomposites[J].MATERIALS CHINA,2017,(12):031-35.[doi:10.7502/j.issn.1674-3962.2017.12.07]
點擊復(fù)制
MoS2為基納米復(fù)合材料的制備及性能研究進(jìn)展(
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中國材料進(jìn)展[ISSN:1674-3962/CN:61-1473/TG]
- 卷:
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- 期數(shù):
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2017年第12期
- 頁碼:
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031-35
- 欄目:
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前沿綜述
- 出版日期:
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2017-12-31
文章信息/Info
- Title:
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Review on preparation and properties of MoS2 based nanocomposites
- 作者:
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宋曉琳; 陳貴鋒; 關(guān)麗秀; 任慧; 陳士強(qiáng); 陳洪建; 陶俊光
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河北工業(yè)大學(xué)材料科學(xué)與工程學(xué)院新型功能材料重點實驗室,河北工業(yè)大學(xué)理學(xué)院
- Author(s):
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Song Xiaolin; Chen Guifeng; Guan Lixiu; Ren Hui; Chen Shiqiang; Chen Hongjian; Tao Junguang
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1 Key Lab for New Type of Functional Materials in Hebei Province, School of Materials Science and Engineering, Hebei University of Technology;2 School of Science, Hebei University of Technology,
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- 關(guān)鍵詞:
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MoS2; 納米復(fù)合材料; 光催化; 電化學(xué)析氫; 電池性能
- Keywords:
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MoS2; Nanocomposite materials; Photocatalysis; Electrochemical hydrogen evolution reaction; Battery performance
- DOI:
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10.7502/j.issn.1674-3962.2017.12.07
- 文獻(xiàn)標(biāo)志碼:
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A
- 摘要:
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二硫化鉬(MoS2)是一種層狀過渡族金屬硫化物材料,由于其單層獨特的電子結(jié)構(gòu)及物理化學(xué)性能被廣泛的應(yīng)用 在各個領(lǐng)域,包括光降解有機(jī)染料、電化學(xué)析氫、及太陽能電池等方面。近幾年,二硫化鉬納米材料由于比表面積較大、 禁帶寬度窄、優(yōu)秀的電學(xué)性能及其較高的電子遷移率等,引起人們的強(qiáng)烈關(guān)注,但其內(nèi)部存在缺陷,因此作為一種單一的半導(dǎo)體材料,限制了其在許多方面的應(yīng)用。此綜述介紹了MoS2的不同形貌結(jié)構(gòu)及其最新的制備方法,除此之外,可以通過MoS2界面改性處理的手段耦合其他半導(dǎo)體,增加其活性位點,降低電子空穴的復(fù)合速率,提高其循環(huán)穩(wěn)定性。最后,對其環(huán)境和能源方面的應(yīng)用進(jìn)行總結(jié)介紹。
- Abstract:
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MoS2 is a prototype of layered transition metal dichalcogenides. Owing to its unique electronic structure and physical and chemical performance, it has been widely used in areas of photocatalytical degradation of organic dyes, electrochemical hydrogen evolution reaction, and solar cells, etc. In recent years, MoS2 nanomaterials have drawn increased attentions due to its high specific surface area, narrow band gap, excellent electrical properties and high electron mobility. However, its intrinsic defect structures limit its applications in many ways. This review introduces different preparation methods for MoS2 with varied structure and morphologies. In addition, MoS2-based functional materials can be engineered by the interface modification with increased active sites, which reduces the electron-hole recombination rate thus higher quantum yield and enhances the cycle stability. In the end, we review its applications in areas of environment and energy usage.
更新日期/Last Update:
2017-11-28