文章信息/Info

Title:

Effect of Synthesis Temperature on Fabricating SiC Nanowires on C/C Composites

作者:

強新發; 嚴 龍; 方 青; 陳寧宇; 張薛佳

南京工程學院 江蘇省先進結構材料與應用技術重點實驗室

Author(s):

QIANG Xinfa;  YAN Long;  FANG Qing;  CHEN Ningyu;  ZHANG Xuejia

Jiangsu Key Laboratory of Advanced Structural Materials and Application Technology,
Nanjing Institute of Technology

關鍵詞:

C/C復合材料; SiC納米線; 化學氣相沉積; Si納米線

Keywords:

C/C composites;  SiC nanowires;  CVD;  Si nanowires

DOI:

10.7502/j.issn.1674-3962.2017.12.09

文獻標志碼:

A

摘要:

為了提升C/C復合材料表面SiC涂層的韌性及其與基體的結合強度，以三氯甲基硅烷為前驅體，采用常壓化學氣相沉積法在C/C復合材料表面制備了SiC納米線，研究了不同合成溫度對納米線的物相、形貌和結構的影響。借助XRD、SEM、TEM和EDS對所制備的納米線進行物相、形貌和結構的表征，結果表明1300 ℃下可制備得到較為純凈的SiC納米線，形狀平直，表面光滑，取向隨機呈網狀分布，直徑大約為100~160 nm，長度可達幾百微米；隨著合成溫度的不斷升高，納米線的物相逐漸由β-SiC和Si雙相轉變為單一的β-SiC相，其中Si相是以單晶Si納米線的形式夾雜在SiC納米線中；另外，納米線的沉積速率也隨著溫度的升高大幅度增加，產量增多，致密性增高。

Abstract:

To improve the toughness and bonding strength with C/C composites of SiC coating, SiC nanowires have been fabricated on C/C composites by chemical vapor deposition method using methyltrichlorosilane as precursor at standard atmospheric pressure and the effect of synthesis temperature on the phases, morphologies and structures of nanowires were investigated. The phases, morphologies and structures of as�瞨eceived nanowires were characterized by XRD, SEM, TEM and EDS. The results show that pure SiC nanowires can be prepared at the temperature of 1300 ℃, the SiC nanowires are straight with smooth surface and the orientation is randomly distributed in a network. The SiC nanowires’ diameters are in the range of 100~160 nm, and lengths are up to hundreds of micrometers. The phases of nanowires change from β�睸iC and Si to single β�睸iC with the temperature increasing, and the Si phase is doped with SiC nanowires in the form of single crystal Si nanowires. Moreover, the deposition rate, output and density of the SiC nanowires are observably improved with the increase of synthesis temperature.