[1]羅鋒,胡濤,李佩華,等.碳納米管分散技術(shù)及其與聚合物、硫化鎘復(fù)合材料研究進(jìn)展[J].中國(guó)材料進(jìn)展,2018,(04):048-56.[doi:10.7502/j.issn.1674-3962.2018.04.06]
LUO Feng,,et al.Advances in Dispersion Technologies of Carbon Nanotubes and Its Composites with Polymer and Cadmium Sulfide[J].MATERIALS CHINA,2018,(04):048-56.[doi:10.7502/j.issn.1674-3962.2018.04.06]
點(diǎn)擊復(fù)制
碳納米管分散技術(shù)及其與聚合物、硫化鎘復(fù)合材料研究進(jìn)展(
)
中國(guó)材料進(jìn)展[ISSN:1674-3962/CN:61-1473/TG]
- 卷:
-
- 期數(shù):
-
2018年第04期
- 頁(yè)碼:
-
048-56
- 欄目:
-
前沿綜述
- 出版日期:
-
2018-04-30
文章信息/Info
- Title:
-
Advances in Dispersion Technologies of Carbon Nanotubes and Its Composites with Polymer and Cadmium Sulfide
- 作者:
-
羅鋒1; 2; 3; 胡濤1; 2; 3; 李佩華3; 楊葉華3; 龔興厚1; 2; 3; 吳崇剛1; 2; 3
-
1.湖北工業(yè)大學(xué) 綠色輕工材料湖北省重點(diǎn)實(shí)驗(yàn)室,湖北 武漢 430068 2.綠色輕質(zhì)材料與加工湖北工業(yè)大學(xué)協(xié)同創(chuàng)新中心,湖北 武漢 430068 3.湖北工業(yè)大學(xué)材料與化學(xué)工程學(xué)院,湖北 武漢 430068
- Author(s):
-
LUO Feng1; 2; 3; HU Tao1; 2; 3; LI Peihua3; YANG Yehua3; GONG Xinghou1; 2; 3; WU Chonggang1; 2; 3
-
1.Hubei Provincial Key Laboratory of Green Materials for Light Industry, Hubei University of Technology, Wuhan 430068, China 2.Collaborative Innovation Center of Green Lightweight Materials and Processing, Hubei University of Technology, Wuhan 430068, China 3.School of Materials and Chemical Engineering, Hubei University of Technology, Wuhan 430068, China
-
- 關(guān)鍵詞:
-
碳納米管; 分散; 聚合物; 硫化鎘; 復(fù)合材料
- Keywords:
-
carbon nanotube; dispersion; polymer; cadmium sulfide; composite
- DOI:
-
10.7502/j.issn.1674-3962.2018.04.06
- 文獻(xiàn)標(biāo)志碼:
-
A
- 摘要:
-
作為具有優(yōu)異機(jī)械(強(qiáng)度、模量)與功能(電磁損耗、導(dǎo)熱、導(dǎo)電、介電)性質(zhì)的高比表面積一維納米碳素材料,碳納米管(CNTs)通常與聚合物或以硫化鎘(CdS)為代表的半導(dǎo)體復(fù)合以制得高性能或功能納米復(fù)合材料。當(dāng)以CNTs為主體、聚合物或CdS為改性劑時(shí),大多制備電磁波吸收或介電復(fù)合材料:對(duì)于吸波材料,有效的方法為將共軛聚合物或單晶CdS(均為半導(dǎo)體)包覆于CNTs管壁,利用半導(dǎo)體的高傳導(dǎo)損耗、偶極極化損耗及CNTs半導(dǎo)體界面極化損耗三者的耦合來提高CNTs的吸波性能;對(duì)于介電材料,一般以低介電損耗極性聚合物基體有效分散CNTs,由此在獲得復(fù)合材料高介電常數(shù)的同時(shí),調(diào)控其介電損耗與擊穿場(chǎng)強(qiáng)較純CNTs分別顯著降低與升高,從而實(shí)現(xiàn)高的電荷儲(chǔ)能密度。而當(dāng)以聚合物或CdS為主體、CNTs為改性劑時(shí):若主體為普通聚合物,則憑借CNTs機(jī)械或功能改性劑的體積分?jǐn)?shù)效應(yīng),可以制備高強(qiáng)高模、吸波、導(dǎo)熱、導(dǎo)電及介電等復(fù)合材料;若主體為共軛聚合物或CdS半導(dǎo)體,則由于高比表面積導(dǎo)電CNTs對(duì)半導(dǎo)體強(qiáng)烈的光生電子轉(zhuǎn)移效應(yīng),有利于制備高效光電(光伏、光致發(fā)光、光催化)復(fù)合材料。
- Abstract:
-
As a high specific surface area, onedimensional carbon nanomaterial with outstanding mechanical (strength, modulus, etc.) and functional (electromagnetic loss, heat conduction, electric conduction, dielectric, etc.) properties, carbon nanotubes (CNTs) are usually compounded with polymer or semiconductor, represented by cadmium sulfide (CdS), to prepare highperformance or functional nanocomposites. When CNTs are used as the host with polymer or CdS as the modifier, electromagnetic wave absorbing or dielectric composites are mostly prepared. For the preparation of the former, an effective method is to wrap CNTs with a conjugated polymer or monocrystalline CdS (either is a semiconductor), thereby improving the wave absorbing property of CNTs via a ternary coupling of the semiconductor’s high conduction loss, its dipolar polarization loss, and the CNTssemiconductor interfacial polarization loss. While, for the preparation of the latter, CNTs are generally dispersed effectively in a low dielectric loss, polar polymer matrix to obtain a higher permittivity of the CNTs/polymer composite as well as to decrease its dielectric loss and increase breakdown field intensity significantly, thus to accomplish a high chargeenergy storage density. Conversely, a polymer or CdS also is used as the host with CNTs as the modifier. Based on an ordinary polymer host, the composites with high strength and modulus, wave absorbing, heat conductive, electrically conductive and dielectric can be prepared by means of a volume fraction effect of the CNTs mechanical or functional modifier incorporated. Nevertheless, a conjugatedpolymer or CdS semiconductor host favors the preparation of photoelectronic (photovoltaic, photoluminescent, photocatalytic, etc.) composites with high efficiency due to strong photoelectrons transfer effect on semiconductor caused by the high specific surface area and conductivity of CNTs.
更新日期/Last Update:
2018-05-08