文章信息/Info

Title:

Intriguing Prospects of Silicene and Phosphorene for Innovative 2D Nanoelectronics

作者:

陳佳熠; 陳啟超; 李政雄; 陶立

(東南大學材料科學與工程學院，江蘇 南京 211189)

Author(s):

CHEN Jiayi;  CHEN Qichao;  LI Zhengxiong;  TAO Li

(School of Material Science and Engineering，Southeast University, Nanjing 211189, China)

關鍵詞:

二維材料; 納米技術; 柔性電子器件; 硅烯; 磷烯; 石墨烯

Keywords:

2D Materials;  Nanotechnology;  Flexible Electronics;  Silicene;  Phosphorene;  Graphene

DOI:

10.7502/j.issn.1674-3962.2018.06.06

文獻標志碼:

A

摘要:

二維層片狀材料兼具高機械韌性，可調控帶隙與光學透明度，以及高的表面體積比等優越性能，為新型柔性納米電子器件和傳感器的研究提供了廣闊的平臺。本文介紹兩種新興的單質二維材料：硅烯和磷烯及其器件電學性能和穩定性。硅烯的器件實驗研究因空氣敏感問題一直停滯不前，而最近的三明治夾層轉移與移植法實現了硅烯晶體管的首次亮相。相關實驗觀測證實了理論預測的狄拉克能帶結構，即雙極電輸運機制。室溫靜電學表征觀測到約100 cm2/Vs的載流子遷移率以及10倍的柵極調制，揭示出單原子層硅通道比石墨烯具有更高的柵極調控能力。VA族的磷烯，擁有較高載流子遷移率和可調控適中直接帶隙。即使在塑料基底上仍可達到310-1500 cm2/Vs的高載流子遷移率以及103-105的柵極調制。磷烯結合了石墨烯和過渡金屬硫化物兩者優點于一身，是目前較理想的二維半導體材料。這些研究進展為新型納米器件的發展提供了廣闊前景。

Abstract:

Two-dimensional (2D) atomic sheets yield collective properties of mechanical flexibility, electrical control, optical transparency and high surface-to-volume ratio, which hold promise for advanced flexible nanoelectronics and sensors. This work explores two newly emerging 2D materials, silicene and phosphorene (the Si and P equivalent to graphene) in terms of their air-stability and device properties. Silicene, IVA family cousin of graphene, is predicted to offer a host of exotic electrical properties depending on its material phase, interface and external fields. Recent effort addressed long-lasting air-stability and portability issues, allowing silicene transistor to make its debut, corroborating theoretically predicted ambipolar transport indicating Dirac band structure. Electrostatic characterization on prototype silicene transistors observed carrier mobility ~100 cm2/V-s and 10× gate modulation at RT. In theory, pristine free-standing silicene may offer intrinsic mobility over 1000 cm2/V-s without non-ideal limiting factors, e.g. phase boundary scattering and electron-phonon coupling. The debut of silicene transistor confirms ambipolar transport behavior in atomically thin Si with greater gate modulation than graphene, indicating potential device reach beyond graphene. On the other hand, phosphorene exhibits high mobility and tunable direct bandgap even on plastic substrates, making it the most suitable contemporary 2D semiconductor that combines the merits of graphene and transitional metal dichalcogenides. Phosphorene, phosphorus analog to graphene, is a contemporary semiconductor promising for 2D nanoelectronics due to its direct bandgap bridging between graphene and transitional metal dichalcogenides. Recent few-layer black phosphorus has demonstrated high carrier mobility 310-1500 cm2/Vs with gate modulation 103-105 on flexible polyimide substrate, sustaining under ex-situ bending test with tensile strain up to 1.5%. This recent progress on silicene and phosphorene represent a renewed opportunity for future nanoscale and flexible devices.