文章信息/Info

Title:

Research Progress in the Crystal Growth and Devices of Wide-Bandgap β-Ga2O3

文章編號:

1674-3962(2020)02-0113-11

作者:

陶緒堂; 穆文祥; 賈志泰

（山東大學 晶體材料國家重點實驗室，山東 濟南 250100）

Author(s):

Tao Xutang; Mu Wenxiang; Jia Zhitai

(State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China)

關鍵詞:

β-Ga2O3; 寬禁帶半導體; 單晶生長; 晶體加工; 紫外探測器; 肖特基二極管

Keywords:

β-Ga2O3;  wide-bandgap semiconductor;  single crystal growth;  crystal process;  ultraviolet detector;  Schottky diode

分類號:

O782+.1

DOI:

10.7502/j.issn.1674-3962.201809009

文獻標志碼:

A

摘要:

β-Ga2O3作為新型寬禁帶半導體材料，近年來受到了人們的廣泛關注。β-Ga2O3禁帶寬度可達4.7 eV，相比于第三代半導體SiC和GaN，具有禁帶寬度更大、擊穿場強更高、Baliga品質因子更大、吸收截止邊更短、生長成本更低的優點，有望成為高壓、大功率、低損耗功率器件和深紫外光電子器件的優選材料。此外，β-Ga2O3單晶可以通過熔體法生長，材料制備成本相對較低，有利于大規模應用。重點介紹了β-Ga2O3單晶的生長及工藝優化，然后對晶體加工、性能表征、光電探測及功率器件應用等方面進行了討論，并展望了β-Ga2O3晶體未來的發展方向。

Abstract:

As a new wide-bandgap semiconductor, β-Ga2O3 has attracted a lot of attention in recent years. The bandgap of β-Ga2O3 is as large as 4.7 eV, as a new type of ultra-wide bandgap semiconductor, it has the advantages of larger bandgap, higher breakdown field, bigger Baliga FOM, shorter absorption edge and lower cost, compared to the third-generation semiconductors such as SiC and GaN. Therefore, β-Ga2O3 may become a preferred material for high voltage, high power, low loss power devices, and deep UV optoelectronic devices. Furthermore, β-Ga2O3 single crystals could be grown by melt methods with low cost and high growth speed which is beneficial for large-scale applications. In this paper, the main considerations are focused on single crystal growth and technology optimizations. Besides, the crystal processing, properties characterization, photodetectors, power devices are introduced and future developments are discussed.