文章信息/Info

Title:

Research Progress on the Thermal Characterization Technology of High Power Device and Material

作者:

郭懷新; 黃語恒; 黃宇龍; 陶鵬; 孔月嬋; 李忠輝; 陳堂勝

1. 微波毫米波單片集成和模塊電路重點實驗室，南京電子器件研究所
2. 金屬基復合材料國家重點實驗室，材料科學與工程學院

Author(s):

GUO Huaixin;  HUANG Yuheng;  HUANG Yulong;  TAO Peng;  KONG Yuecan;  LI Zhonghui;  CHEN Tangseng

1. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute
2. State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University

關鍵詞:

功率器件; 熱管理; 結溫; 熱導率; 界面熱阻

Keywords:

power device;  thermal management;  junction temperature;  thermal conductivity;  thermal boundary resistance

DOI:

10.7502/j.issn.1674-3962.2018.12.09

文獻標志碼:

A

摘要:

以氮化鎵為代表的第三代半導體高功率密度的發展受限于自身熱積累效應引起器件結溫升高問題，嚴重導致器件性能和可靠性的下降，因此，器件的熱管理已成為大功率器件研發和應用領域的一個重要研究方向,而器件本身及其材料的熱特性表征貫穿于功率器件散熱技術開發的整個過程，是評估和指導熱管理研發的重要途徑。為此，本文對國內外正在開展的器件芯片級熱特性表征技術研究進展進行了綜述，系統分析了器件結溫、外延薄膜熱導率、界面熱阻等熱性能表征技術的優勢及局限性，并闡述了對芯片級熱管理開發提供的技術指導和面臨的技術挑戰。

Abstract:

With development toward high power density of the third-generation semiconductor, represented as GaN devices, the performance and reliability of power devices will be degraded seriously, limited by heat accumulation problem which leads to the rise of junction temperature. Thus, the thermal management has become an important area in the research and application of power device, and the thermal characterization of the device and self material, which appears throughout the whole development process of dissipation techniques, is a critical evaluation and direction about thermal management. For this, research progress of foreign advanced thermal characterizations for chip-level heat dissipation technology are reviewed in detail, and the advantages and limitations of thermal characterizations, including junction temperature of device, thermal conductivity of epitaxial film, and thermal boundary resistance, are analyzed systemically. Meanwhile, the technical guidance challenges of those thermal characterizations for chip-level thermal management are expressed.