文章信息/Info

Title:

Research Progress on High-Speed 850/980 nm Vertical Cavity Surface Emitting Lasers

文章編號:

1674-3962(2021)04-0290-07

作者:

邢茹萍1; 馬淑芳1; 單恒升1; 劉青明1; 侯艷艷1; 黃佳瑤1; 許并社1; 2

（1.陜西科技大學(xué)前沿科學(xué)與技術(shù)轉(zhuǎn)移研究院 材料原子·分子科學(xué)研究所，陜西 西安 710016）（2.太原理工大學(xué) 新材料界面科學(xué)與工程教育部重點實驗室，山西 太原 030024）

Author(s):

XING Ruping1; MA Shufang1; SHAN Hengsheng1; LIU Qingming1;  HOU Yanyan1; HUANG Jiayao1; XU Bingshe1; 2

(1. Institute of Atomic and Molecular Science，F(xiàn)rontier Institute of Science and Technology， Shaanxi University of Science and Technology，Xi’an 710016，China) (2. Key Laboratory of Interface Science and Engineering in Advanced Materials of the Ministry of Education， Taiyuan University of Technology，Taiyuan 030024，China)

關(guān)鍵詞:

垂直腔面發(fā)射激光器; 光通訊; 高速調(diào)制; 數(shù)據(jù)通訊

Keywords:

vertical cavity surface emitting laser;  optical communication;  high speed modulation;  data communication

分類號:

TN248

DOI:

10.7502/j.issn.1674-3962.201907025

文獻標志碼:

A

摘要:

垂直腔面發(fā)射激光器（VCSEL）具有低損耗、光束質(zhì)量好、光纖耦合效率高、調(diào)制速率高且易于與其他光電子器件集成等優(yōu)勢，在光互連、光存儲、高速傳輸和通訊等領(lǐng)域得到了迅猛發(fā)展。隨著大數(shù)據(jù)時代的到來，對建立高帶寬、低損耗的高速光通訊網(wǎng)絡(luò)提出了更高的要求。因此，近年來VCSEL在面向高速數(shù)據(jù)通訊中提高調(diào)制速率、降低能量損耗等方面得到了廣泛的研究。首先介紹了用于短距離數(shù)據(jù)通訊中的近紅外波段850和980 nm VCSEL器件的基本結(jié)構(gòu)，然后從高速性能的影響因素出發(fā)對其進行合理的理論設(shè)計，綜述了近年來850和980 nm VCSEL高速性能的研究進展，最后展望了VCSEL在未來數(shù)據(jù)通訊領(lǐng)域的發(fā)展趨勢。

Abstract:

Vertical cavity surface emitting lasers (VCSELs) have the advantages of low loss, good beam quality, high fiber coupling efficiency, high modulation rate and easy integration with other optoelectronic devices. They have developed rapidly in the fields of optical interconnection, optical storage, high-speed transmission and date communication. With the advent of the big data era, higher requirements have been put forward for the establishment of high-speed optical communication networks with high bandwidth and low loss. Therefore, in recent years, VCSELs have been extensively studied in high-speed data communications to increase the modulation rate and reduce energy loss. Firstly, the basic structure of the 850/980 nm VCSEL devices in the near-infrared band used in short-distance data communications is introduced. And then a reasonable theoretical design is made from the factors affecting high-speed performance, the research progress of the high-speed performance of 850/980 nm VCSEL is introduced. Finally, the future development trend of VCSEL in the field of data communication is prospected.