文章信息/Info

Title:

Preparation of Novel Nano-Tubular Molybdenum Disulfide

文章編號:

1674-3962(2021)01-0069-05

作者:

王巍; 郭俊宏

（南京郵電大學電子與光學工程學院，江蘇 南京 210000）

Author(s):

WANG Wei;  GUO Junhong

(College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications，Nanjing 210000，China)

關鍵詞:

二維材料; 氣相沉積法; 二硫化鉬; 納米管; 形成機理

Keywords:

two-dimensional material;  vapor deposition method;  molybdenum disulfide;  nanotube;  growth mechanism

分類號:

TQ125.1；TB383

DOI:

10.7502/j.issn.1674-3962.201911023

文獻標志碼:

A

摘要:

二硫化鉬（MoS2）作為十分熱門的材料，以其獨特的物理和化學特性備受關注。納米MoS2因其具有可調控帶隙、巨大的比表面積、豐富的邊緣位點及良好的化學穩定性等優異的理化性質，在光電器件、催化、鋰離子電池及超級電容器、潤滑等領域有巨大的應用價值。介紹了采用化學氣相沉積（CVD）法，在氬氣保護氛圍下，以三氧化鉬粉末與硫粉作為反應物，在管式爐中將反應溫度保持在750 ℃，在二氧化硅襯底上沉積生長MoS2納米管，并對其進行SEM、TEM、XRD和Raman等表征和分析。XRD和Raman表征結果顯示，樣品是（002）取向生長且結晶晶粒大小約為22 nm的體型MoS2。另外根據SEM和TEM照片所顯示的微結構，對MoS2納米管的形成原因和生長過程進行了分析，認為MoS2在生長過程中為了降低結構能而彎曲并堆疊生長，并且在彎曲的納米片上堆疊生長的納米片由于層間的范德瓦爾斯力使每層生長方向的角度越來越大，當生長角度達到60°左右時，MoS2開始沿軸向方向垂直堆疊生長，并最終形成單開口的管狀結構。這是一種與傳統納米管生長完全不同的生長方式。

Abstract:

As a very popular material, molybdenum disulfide（MoS2） has attracted much attention due to its unique physical and chemical properties. Nano-MoS2 has great application value in optoelectronic devices, catalysis，lithium-ion batteries, supercapacitors, lubrication and other fields because of their excellent physical and chemical properties, such as adjustable band gap, huge specific surface area, abundant edge sites and good chemical stability．This article describes a method for depositing and growing MoS2 nanotubes on a silicon dioxide substrate. It is a chemical vapor deposition (CVD) method in which MoO3 powder and sulfur powder are used as reactants under argon protective gas atmosphere, and the reaction temperature is maintained at 750 ℃ in a tube furnace. The experimental samples are characterized by SEM, TEM, XRD and Raman. XRD and Raman characterization results reveal that the samples are bulk MoS2 with (002) orientation growth and crystal grain size of about 22 nm. In addition, according to the microstructures shown in the SEM and TEM images, the formation mechanism and growth process of MoS2 nanotubes are analyzed. It is considered that MoS2 is bent and stacked to reduce the structural energy during the growth process, and the angle of the growth direction of each layer of nanosheets stacked on the bent nanosheets is larger and larger due to the Van Der Waals force between the layers. When the growth angle reaches about 60°, MoS2 began to stack vertically along the axial direction, and finally formed a single-open tubular structure. This is a completely different growth method compared with traditional nanotube growth.