文章信息/Info

Title:

Chemical Synthesis and Photoelectric Devices Application of p-TSO Delafossite Materials

文章編號:

1674-3962(2021)07-0525-10

作者:

韓美杰1; 2; 齊小犇3; 張如林3; 陳平1; 劉永慧1; 陳國初1

（1. 上海電機學院電氣學院，上海 201306）（2. 華東師范大學物理與電子科學學院，上海 200241）（3. 上海電機學院材料學院，上海 201306）

Author(s):

HAN Meijie1; 2;  QI Xiaoben3;  ZHANG Rulin3;  CHEN Ping1;  LIU Yonghui1;  CHEN Guochu1

(1. School of Electrical Engineering, Shanghai Dianji University, Shanghai 201306, China) (2. School of Physics and Electronic Science，East China Normal University，Shanghai 200241，China) (3. School of Materials，Shanghai Dianji University，Shanghai 201306，China)

關鍵詞:

三元氧化物; 銅鐵礦材料; p型寬禁帶半導體; 化學合成法; 紫外光電探測器; 空穴傳輸層; 薄膜晶體管

Keywords:

ternary oxide;  delafossite materials;  p-type wide bandgap semiconductor;  chemical synthesis;  ultraviolet photodetector;  hole transport layer;  thin film transistor

分類號:

TN304.2;O472

DOI:

10.7502/j.issn.1674-3962.202002004

文獻標志碼:

A

摘要:

銅鐵礦基三元氧化物CuMO2是p型的寬禁帶半導體材料，具有紫外截止、可見光區和近紅外光區高度透明的光學特性和良好的電學性能。主要綜述了CuMO2銅鐵礦基材料近年來報道較多的溶膠-凝膠、水熱合成、靜電紡絲以及聚合物輔助沉積4種化學制備方法及其當前的研究現狀，詳細介紹了CuMO2銅鐵礦基的紫外光電探測器、鈣鈦礦太陽能電池以及薄膜晶體管等光電器件的制備和性能研究。這些研究表明，CuMO2三元氧化物極有望應用于低成本、高效益、穩定性好的光電器件和p型薄膜晶體管中，其性能研究及其器件探索擁有較大的研究潛力。然而現階段其薄膜制備的合成溫度偏高，低維銅鐵礦材料的電學性能有待進一步提升。因此，銅鐵礦基光電器件的研發與應用是一項挑戰與機遇并存的工作。

Abstract:

Ternary oxide delafossite CuMO2 is a p-type wide bandgap semiconductor with excellent optical and electrical properties. The CuMO2 materials have high transparency in the visible and near�瞚nfrared regions, while the properties of ultraviolet-cutoff and good conductivity. The properties and four chemical synthesis methods (sol-gel method, hydrothermal synthesis, electrostatic spinning technology, and polymer-assisted-deposition method) of CuMO2 materials are reviewed in this paper. The research progress and properties of CuMO2 devices applied in the ultraviolet detector, perovskite solar cells, and thin film transistors are introduced in detail. These studies show that the ternary oxide CuMO2 is very promising to be used in low cost, high efficiency, good stability of photoelectric devices and p-type thin film transistors, and its performance research and device exploration have great potential. However, the synthesis temperature of its thin films is high at present. The electrical properties of the low�瞕imensional delafossite materials need to be further improved. Therefore, the research, development and application of delafossite-based optoelectronic devices is both a challenge and an opportunity.