文章信息/Info

Title:

Inverse Spin Hall Effect of Conductive Bismuth Oxide

文章編號:

1674-3962(2021)10-0756-05

作者:

王孟怡; 邱志勇

（大連理工大學材料科學與工程學院 三束材料改性教育部重點實驗室遼寧省能源材料及器件重點實驗室，遼寧 大連 116000）

Author(s):

WANG Mengyi;  QIU Zhiyong

(Key Laboratory of Energy Materials and Devices (Liaoning Province), Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, School of Materials Science and Engineering, Dalian University of Technology, Dalian 116000, China)

關鍵詞:

氧化鉍; 導電氧化物; 逆自旋霍爾效應; 自旋霍爾角; 自旋擴散長度; 自旋泵浦

Keywords:

bismuth oxide;  conductive oxide;  inverse spin Hall effect;  spin Hall angle;  spin diffusion length;  spin pumping

分類號:

O469

DOI:

10.7502/j.issn.1674-3962.202101019

文獻標志碼:

A

摘要:

自旋霍爾效應及其逆效應作為自旋電子學中實現自旋�搽姾赊D換的核心物理效應，對純自旋流的產生、探測有著重要的應用價值，是自旋電子器件開發與應用的關鍵技術節點。對高自旋�搽姾赊D換效率材料體系的探索與開發是該領域的核心課題。以導電氧化鉍薄膜為對象，研究其中的逆自旋霍爾效應。采用交流磁控濺射系統，使用氧化鉍陶瓷靶制備了不同厚度的導電氧化鉍薄膜，并與坡莫合金薄膜構成鐵磁/非磁雙層自旋泵浦器件，在該器件中首次觀測并確認了導電氧化鉍薄膜中逆自旋霍爾效應所對應的電壓信號。通過逆自旋霍爾電壓對氧化鉍薄膜厚度的依存關系，定量地估算了氧化鉍薄膜的自旋霍爾角及自旋擴散長度。通過提出一種新的具備可觀測逆自旋霍爾效應的材料體系，不僅拓展了自旋電子材料的選擇空間，也為新型自旋電子器件的設計和應用提供了思路。

Abstract:

The direct and inverse spin Hall effect is the key effect for spin-charge conversion in spintronics, which plays a vital role in the generation and detection of pure spin currents. It is a core issue to develop and explore materials with high spin-charge conversion efficiency. Here, we demonstrate the inverse spin Hall effect in a conductive bismuth oxide. The bismuth oxide thin films with different thicknesses were prepared from a sintered bismuth oxide target by an rf-sputtering system. Then, permalloy/bismuth oxide bilayer spin pumping devices were developed, with which voltage signals corresponding to the inverse spin Hall effect were confirmed by the spin pumping technique. Furthermore, by systematical studying of bismuth-oxide thickness dependence of those spin Hall voltages, the spin Hall angle and spin diffusion length were quantitatively estimated. Our results propose a novel system with an observable inverse spin Hall effect, which expands the possibility of spintronic materials and guides a new path for the development of spin-based devices.