[1]符銳,馮宗強,黃曉旭.位錯三維表征技術[J].中國材料進展,2021,40(06):417-426.[doi:10.7502/j.issn.1674-3962.202103019]
FU Rui,FENG Zongqiang,HUANG Xiaoxu.ThreeDimensional Characterization Techniques of Dislocations[J].MATERIALS CHINA,2021,40(06):417-426.[doi:10.7502/j.issn.1674-3962.202103019]
點擊復制
位錯三維表征技術(
)
中國材料進展[ISSN:1674-3962/CN:61-1473/TG]
- 卷:
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40
- 期數:
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2021年第06期
- 頁碼:
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417-426
- 欄目:
-
- 出版日期:
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2021-06-30
文章信息/Info
- Title:
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ThreeDimensional Characterization Techniques of Dislocations
- 文章編號:
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1674-3962(2021)06-0417-10
- 作者:
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符銳1; 馮宗強1; 2; 3; 黃曉旭1; 2; 3
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(1.重慶大學材料科學與工程學院,重慶 400044)(2.重慶大學 電子顯微鏡中心,重慶 400044) (3. 重慶大學 輕合金材料教育部國際合作聯合實驗室,重慶 400044)
- Author(s):
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FU Rui1; FENG Zongqiang1; 2; 3; HUANG Xiaoxu1; 2; 3
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(1. College of Materials Science and Engineering, Chongqing University, Chongqing 400044, China) (2. Electron Microscopy Center, Chongqing University, Chongqing 400044, China) (3. International Joint Laboratory for Light Alloys (MOE), Chongqing University, Chongqing 400044, China)
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- 關鍵詞:
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位錯; 三維表征; 同步輻射X射線; 電子通道襯度成像; 透射電子顯微鏡; 體視學成像; 三維位錯晶體學
- Keywords:
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dislocation; 3D characterization; synchrotron radiation Xray; electron channeling contrast imaging; TEM; stereology imaging; tomographic crystallography of dislocations
- 分類號:
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TG113;TG115.21+3
- DOI:
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10.7502/j.issn.1674-3962.202103019
- 文獻標志碼:
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A
- 摘要:
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位錯的三維表征是準確認識位錯特性和行為的基礎。綜述了基于同步輻射X射線、聚焦離子束電子通道襯度成像系統和透射電子顯微鏡的位錯三維重構方法,重點介紹了基于透射電子顯微鏡的原子分辨率位錯三維重構、體視學原理位錯三維重構和系列傾轉位錯三維重構方法的技術原理和應用實例,對比討論了上述技術在分辨率、定量表征和參量信息耦合能力方面的優缺點,隨后介紹了一種基于透射電子顯微鏡、可以實現位錯幾何和晶體學特征參量高精度耦合表征的位錯三維定量集成表征技術,并在此基礎上總結和展望了未來各類位錯三維表征技術的發展趨勢和技術特點。
- Abstract:
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The three-dimensional (3D) characterization of dislocations is the basis for full understanding the characteristics and behaviors of dislocations. In this article, the 3D dislocation characterization techniques based on the synchrotron radiation X-ray, the focused ion beam-electron channeling contrast imaging system and the transmission electron microscopy (TEM) are reviewed, with the emphases on the TEM-based methods such as atomic resolution, stereo pair and tilt-series reconstruction of dislocations. The spatial resolution, capability of quantification and coupling of parameters in all these methods are compared and discussed. A novel TEM-based tomographic crystallography method which can simultaneously, quantitatively and precisely characterize the geometric and crystallographic parameters of 3D dislocation structures is also introduced. Further, the technical trends and characteristics of the 3D dislocation characterization techniques in the future are foreseen and summarized.
備注/Memo
- 備注/Memo:
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收稿日期:2021-03-18修回日期:2021-04-20 基金項目:國家重點研發計劃資助項目(2016YFB0700400);國家自然科學基金資助項目(51971045)第一作者:符銳,男,1994年生,博士研究生通訊作者:馮宗強,男,1983年生,副教授,博士生導師, Email:zqfeng@cqu.edu.cn 黃曉旭,男,1963年生,教授,博士生導師, Email:xiaoxuhuang@cqu.edu.cn
更新日期/Last Update:
2021-05-27