文章信息/Info

Title:

Effect of Substrate Bias on Structure and Properties of Zr-B-O-N Thin Films

文章編號:

1674-3962(2022)07-0584-05

作者:

孟瑜1; 宋忠孝2; 王小艷1; 錢旦2; 劉明霞1; 李曉華3

（1.西安文理學院 陜西省表面工程與再制造重點實驗室，陜西 西安 710065） (2.西安交通大學 金屬材料強度國家重點實驗室, 陜西 西安 710049) (3.中車永濟電機有限公司，山西 永濟 044502)

Author(s):

MENG Yu1;  SONG Zhongxiao2;  WANG Xiaoyan1;  QIAN Dan2;  LIU Mingxia1;  LI Xiaohua3

（1.Shaanxi Key Laboratory of Surface Engineering and Remanufacturing, Xi’an University, Xi’an 710065, China）（2.State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China）（3. CRRC Yongji Motor Co., Ltd., Yongji 044502, China）

關鍵詞:

Zr-B-O-N薄膜; 磁控濺射; 基底偏壓; 微觀結構; 擴散阻擋性能

Keywords:

Zr-B-O-N thin films;  magnetron sputtering;  substrate bias;  microstructure;  diffusion barrier performance

分類號:

TG146.4;TB383

DOI:

10.7502/j.issn.1674-3962.202106012

文獻標志碼:

A

摘要:

二硼化鋯（ZrB2）薄膜因具有高熔點、低電阻率等特點，在硅基器件Cu互連工藝中具有廣闊的應用前景。然而，沉積態ZrB2薄膜多呈現結晶態，其晶界會為Cu原子提供快速擴散通道，通過非金屬元素（N或O）摻雜可以得到非晶結構的ZrB2薄膜，以提高其擴散阻擋性能。采用反應磁控濺射技術，在不同基底偏壓下在單晶Si（100）基底上沉積了Zr-B-O-N薄膜和Cu/Zr-B-O-N雙層膜，分別利用原子力顯微鏡、X射線衍射儀、透射電子顯微鏡、掃描電子顯微鏡和四點探針儀等檢測方法對薄膜的微觀組織結構、電學和擴散阻擋性能進行表征分析。研究結果表明：沉積態Zr-B-O-N薄膜表面平整，粗糙度隨基底偏壓增加而增加，且薄膜均呈現非晶結構；當基底偏壓為150 V時，10 nm厚的非晶Zr-B-O-N薄膜可以在700 ℃有效阻擋Cu原子擴散。因此，Zr-B-O-N薄膜是一種具有應用潛力的擴散阻擋層材料。

Abstract:

Zirconium diboride(ZrB2) thin films possess high melting point and low resistivity, and has a wide application potential in Cu interconnection of silicon based devices. However, the deposited ZrB2 films usually show crystal structure, and its grain boundary provides a fast diffusion path for Cu atoms. Amorphous structure can be obtained by doping nonmetallic elements (N or O atoms) to improve its diffusion barrier performance. In this paper, Zr-B-O-N films were deposited on single crystal Si (100) substrates by reactive magnetron sputtering under different substrate bias voltages. The microstructure, electrical and diffusion barrier performance of the films were characterized by atomic force microscopy, X�瞨ay diffraction, transmission electron microscopy, scanning electron microscopy and four point probe. The results show that the deposited Zr-B-O-N films are amorphous and have flat surface, the roughness increases with the increase of substrate bias voltage. When the substrate bias voltage is 150 V, the formed amorphous Zr-B-O-N film with a thickness of 10 nm can effectively block Cu atom diffusion at 700 ℃. Therefore, Zr-B-O-N film is a kind of potential diffusion barrier materials in the future.