文章信息/Info

Title:

Application of Atomic Resolution Energy Dispersive X-ray Spectroscopy in Advanced Functional Materials

文章編號:

1674-3962(2023)03-0205-09

作者:

鄭赟喆1; 黃榮1; 2

（1. 華東師范大學(xué) 極化材料與器件教育部重點實驗室，上海 200241） （2. 山西大學(xué) 極端光學(xué)協(xié)同創(chuàng)新中心，山西 太原 030006）

Author(s):

ZHENG Yunzhe1; HUANG Rong1; 2

（1. Key Laboratory of Polar Materials and Devices (MOE)， East China Normal University， Shanghai 200241, China） （2. Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China）

關(guān)鍵詞:

透射電子顯微鏡; 能譜; 原子分辨率; 功能材料

Keywords:

transmission electron microscope;  EDS;  atomic resolution;  functional materials

分類號:

TN16; TB34

DOI:

10.7502/j.issn.1674-3962.202109013

文獻標志碼:

A

摘要:

從原子尺度揭示材料的微觀結(jié)構(gòu)及其對應(yīng)的化學(xué)成分是深刻理解材料構(gòu)效關(guān)系和進行材料宏觀物性調(diào)控的前提和基礎(chǔ)。基于球差校正掃描透射電子顯微鏡(Cs-STEM)能譜(energy dispersive X-ray spectroscopy, EDS)技術(shù)的原子尺度化學(xué)成像是目前研究固態(tài)晶體材料微結(jié)構(gòu)及成分的一種強有力的工具。首先概述了原子分辨率EDS技術(shù)的基本原理和前沿技術(shù)進展，然后以原子分辨率EDS在揭示LaAlO3-SrTiO3鐵電固溶體薄膜中原子尺度的成分梯度、SmNiO3薄膜中三維Ruddlesden-Popper層錯網(wǎng)絡(luò)、Ge2Sb2Te5相變存儲材料在熱退火過程中的元素遷移、氧化物晶界處溶質(zhì)的有序偏析和Cu-Zn-Sn-S熱電陶瓷中獨特的納米疇結(jié)構(gòu)為例，展示了該技術(shù)在先進功能材料研究中的應(yīng)用場景和分析方法。最后，基于原子分辨率EDS技術(shù)的現(xiàn)狀對其發(fā)展 方向進行了展望。

Abstract:

Revealing the structure and chemical composition of materials at atomic scale is the basis and prerequisite for understanding the structure-property relationship of materials and tailoring their physical properties. Atomic scale chemical imaging based on energy dispersive X-ray spectroscopy (EDS) in Cs-corrected scanning transmission electron microscope has been the most powerful tool for studying the microstructure of solid crystal materials. In this paper, we first introduce the basic principle and frontier progress of atomic resolution EDS. Then, we take the application scenarios of atomic resolution EDS in revealing the atomic scale composition gradient in LaAlO3-SrTiO3 ferroelectric solid solution thin films, three-dimensional Ruddlesden-Popper fault networks in SmNiO3 thin films，the atomic migration in the phase change storage material Ge2Sb2Te5，the ordered segregation of solutes at oxide grain boundaries and the unique nanodomain structure in Cu-Zn-Sn-S thermoelectric ceramics as examples to demonstrate the analysis methods. Finally, the future development of the atomic resolution EDS is prospected.