文章信息/Info

Title:

Field-Free Perpendicular Magnetization Switching Driven by Spin-Orbit Torque

文章編號:

1674-3962(2021)12-0972-10

作者:

吳闖文1; 2; 崔寶山2; 3; 朱增泰2; 3; 張廣宇2; 3; 于國強2; 3; 梁世恒1; 王浩1

（1．湖北大學物理與電子科學學院，湖北 武漢 430062）（2．松山湖材料實驗室，廣東 東莞 523808）（3．中國科學院物理研究所，北京 100190）

Author(s):

WU Chuangwen1; 2;  CUI Baoshan2; 3;  ZHU Zengtai2; 3;  ZHANG Guangyu2; 3;  YU Guoqiang2; 3;  LIANG Shiheng1;  WANG Hao1

(1.School of Physics and Electronic Science, Hubei University, Wuhan 430062, China) (2.Songshan Lake Materials Laboratory, Dongguan 523808, China) (3.Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China)

關鍵詞:

自旋軌道矩; 垂直磁各向異性; 自旋邏輯器件; 低功耗; 零場磁矩翻轉

Keywords:

spin-orbit torque;  perpendicular magnetic anisotropy;  spintronic logic devices;  low power consumption;  field-free magnetization switching

分類號:

O47

DOI:

10.7502/j.issn.1674-3962.202111030

文獻標志碼:

A

摘要:

基于自旋軌道矩效應的全電學驅動磁矩翻轉具有寫入速度快、耐久性強、使用壽命長、功耗低等優勢，在新型自旋電子存儲器和邏輯器件中展現出巨大的應用潛力，從而引起了廣泛關注。對于傳統自旋軌道矩驅動的垂直磁矩翻轉，通常需要在平面內施加外部輔助磁場才能得以實現，這不僅增加了額外的功耗，而且使設計電路更加復雜，因此實現零場下自旋軌道矩驅動垂直磁矩翻轉就顯得尤為重要。涵蓋了近年來通過自旋軌道矩實現零場下磁矩翻轉的相關進展，其中實現零場磁矩翻轉的關鍵機制主要包括磁性層結構對稱性破缺、面內的交換偏置場、電場調控面內的各向異性、亞鐵磁中梯度各向異性以及梯度飽和磁化強度等。

Abstract:

Spin-orbit torque (SOT)-based all-electric driven magnetization switching with fast writing speed, high endurance, long service life and low-power consumption has attracted much attention for the potential application in next-generation spintronic memories and logic devices. For conventional SOT-driven perpendicular magnetization switching, an external in-plane magnetic field is inevitable to break the symmetry, which is the main obstacle for practical applications due to its requirement of more power consumption and additional complex design circuits. Thus, the realization of field-free perpendicular magnetization switching by SOT is eagerly desired. Here, we reviewed the recent advances in field-free SOT-driven magnetization switching. The correlated mechanisms include symmetry breaking of the magnetic layer structure, in-plane exchange bias field, modulation of the in-plane anisotropy by electric field regulation, gradient anisotropy in ferrimagnets, and gradient saturation magnetization intensity, etc.