文章信息/Info

Title:

External-Field Control of Collinear and Noncollinear Antiferromagnetic Spins

文章編號:

1674-3962(2021)11-0881-13

作者:

閆晗; 秦培鑫; 劉知琪

（北京航空航天大學材料科學與工程學院，北京 100191）

Author(s):

YAN Han;  QIN Peixin;  LIU Zhiqi

(School of Materials Science and Engineering, Beihang University, Beijing 100191, China)

關鍵詞:

反鐵磁; 自旋; 電場調控; 壓電應力; 自旋軌道力矩

Keywords:

antiferromagnets;  spin;  electric-field control;  piezoelectric stress;  spin-orbit torque

分類號:

P333

DOI:

10.7502/j.issn.1674-3962.202104010

文獻標志碼:

A

摘要:

當今時代，數字化信息存儲總量爆炸式增長,數據存儲所消耗的電能越來越多。大數據、云計算、人工智能等信息技術的快速發展，對信息存儲器件的性能提出了更高的要求。然而，傳統的以鐵磁材料為核心的自旋電子學器件表現出了明顯的局限性。尋找和研發一種響應速度快、能耗低、集成密度高、抗磁場干擾強的存儲材料對促進信息技術的發展和降低能源消耗具有重要的意義。在這一背景下，反鐵磁自旋電子學應運而生。根據自旋結構分類，反鐵磁材料可以大致分為共線和非共線反鐵磁兩類。分別闡述了這兩類反鐵磁材料的自旋操控方法，包括磁場、電流誘導自旋軌道力矩、利用離子液體和壓電基片施加電場、靜壓力等途徑，最終實現了反鐵磁材料自旋的有效控制以及反常霍爾效應、交換偏置、普通電阻態的可逆調控。此外，還總結對比了鐵磁、共線反鐵磁與非共線反鐵磁材料性質的相似與差異之處，討論了反鐵磁材料在未來自旋電子學存儲和運算器件中的應用前景。

Abstract:

Nowadays, it is the information age and the total amount of digital information is explosively increasing. The fast development of big data, cloud computation and artificial intelligence objectively demands more powerful performance of memory devices. However, traditional spintronic devices with ferromagnetic materials show obvious limitations. Therefore, it is of great significance to develop high-speed, low-power, high-density and strong-magnetic-field-insensitive memory devices. Antiferromagnetic spintronics came into being under this background. According to the spin structure, antiferromagnetic materials can be classified into two general classes: collinear antiferromagnets and noncollinear antiferromagnets. This review article summarizes various means to modulating antiferromagnetic spins such as magnetic fields, spin�瞣rbit torque induced by an electric current, electric fields applied on the ionic liquid and piezoelectric substrates, and hydrostatic pressure. As a result, the anomalous Hall effect, exchange bias and longitudinal resistance can be manipulated reversibly. Moreover, this review points out the differences and similarities among ferromagnetic materials, collinear and noncollinear antiferromagnetic materials. Finally, the potential of antiferromagnetic materials for future information technology is also discussed.