[1]郭逢凱,蔡偉,隋解和.碲化錫的微結構調控與熱電性能[J].中國材料進展,2022,41(12):979-989.[doi:10.7502/j.issn.1674-3962.202208029]
GUO Fengkai,CAI Wei,SUI Jiehe.Microstructure Regulation and Thermoelectric Properties of SnTe[J].MATERIALS CHINA,2022,41(12):979-989.[doi:10.7502/j.issn.1674-3962.202208029]
點擊復制
碲化錫的微結構調控與熱電性能(
)
中國材料進展[ISSN:1674-3962/CN:61-1473/TG]
- 卷:
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41
- 期數:
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2022年第12期
- 頁碼:
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979-989
- 欄目:
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- 出版日期:
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2022-12-31
文章信息/Info
- Title:
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Microstructure Regulation and Thermoelectric Properties of SnTe
- 文章編號:
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1674-3962(2022)12-0979-11
- 作者:
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郭逢凱; 蔡偉; 隋解和
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(哈爾濱工業大學材料科學與工程學院,黑龍江 哈爾濱 150001)
- Author(s):
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GUO Fengkai; CAI Wei; SUI Jiehe
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(School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China)
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- 關鍵詞:
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熱電材料; 碲化錫; 能帶調控; 缺陷調控; 力學性能
- Keywords:
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thermoelectric materials; SnTe; band adjustment; defects control; mechanical properties
- 分類號:
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TB34;O472
- DOI:
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10.7502/j.issn.1674-3962.202208029
- 文獻標志碼:
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A
- 摘要:
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熱電材料能夠利用固體內部載流子的定向遷移將熱能直接轉換成電能,在深空探測和工業廢熱回收發電領域具有廣闊的應用前景。影響熱電輸運行為的多個物理參數之間互相耦合,此消彼長,使材料熱電優值的提高困難重重。碲化錫是一種環境友好型中溫熱電材料,近年來獲得了廣泛關注。針對碲化錫本征陽離子空位濃度過高、雙價帶能量差較大、晶格熱導率較高等缺點,綜述了近10年來關于碲化錫熱電輸運參數解耦以及熱電性能提高的主要方法,包括載流子濃度優化、能帶結構調控、晶體缺陷設計與構建等,論述了各優化方法的作用機制和物理本質。指出重摻雜提高碲化錫熱電性能的方法會導致其力學性能下降的問題,強調了在實際應用中熱電和力學性能的取舍,展望了碲化錫從材料到器件將面臨的重大挑戰。
- Abstract:
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Thermoelectric materials can directly convert thermal energy into electrical energy by using the directional transfer of carriers in solid, and have broad application prospects in deep space exploration and industrial waste heat recovery power generation. The physical parameters that affect the thermoelectric transport behavior are coupled with each other, which makes it difficult to improve the thermoelectric figure of merit. SnTe is a kind of environment-friendly mid-temperature thermoelectric materials, which has received extensive attention in recent years. In view of the disadvantages of SnTe such as high concentration of intrinsic cation vacancy, large offset between the two valence bands and high lattice thermal conductivity, the main methods for decoupling thermoelectric parameters and improving thermoelectric performance of SnTe in the past ten years are reviewed, including carrier concentration optimization, energy band structure adjustment, crystal defect design and construction, etc. The mechanism and physical nature of each optimization method are discussed. It is pointed out that heavy doping in SnTe will lead to the decline of mechanical properties while improving thermoelectric performance, and the trade-off between thermoelectric and mechanical properties in practical applications is emphasized. Moreover, the major challenges of SnTe from materials to devices are prospected.
備注/Memo
- 備注/Memo:
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收稿日期:2022-08-27 修回日期:2022-10-14 基金項目:國家自然科學基金資助項目(52101247, 52130106)第一作者:郭逢凱,男,1991年生,講師通訊作者:隋解和,男,1979年生,教授,博士生導師, Email:suijiehe@hit.edu.cn
更新日期/Last Update:
2022-11-30