文章信息/Info

Title:

Progress in Half-Heusler Thermoelectric Materials and Devices

文章編號:

1674-3962(2022)12-01029-13

作者:

苗圃; 韓屾; 高梓恒; 付晨光; 朱鐵軍

（浙江大學材料科學與工程學院 硅材料國家重點實驗室，浙江 杭州 310027）

Author(s):

MIAO Pu;  HAN Shen;  GAO Ziheng;  FU Chenguang;  ZHU Tiejun

(State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China)

關鍵詞:

熱電材料; 半赫斯勒合金; 熱電器件; 電熱輸運; 本征缺陷

Keywords:

thermoelectric materials;  half-Heusler alloys;  thermoelectric devices;  thermoelectric transport;  intrinsicdefects

分類號:

TB34

DOI:

10.7502/j.issn.1674-3962.202209032

文獻標志碼:

A

摘要:

熱電材料是一種可以直接實現熱能與電能相互轉化的新型清潔能源材料，其中半赫斯勒熱電材料因其優異的高溫熱電性、良好的機械性能與熱穩定性展現出較強的應用潛力，是極具競爭力的高溫熱電能量轉換材料。簡要回顧了近20年來半赫斯勒熱電材料的發展歷程，重點介紹了以ZrNiSn、NbFeSb、ZrCoSb為代表的典型18電子半赫斯勒化合物的熱電輸運機制特點與性能優化策略，探討了以名義19電子半赫斯勒體系為代表的缺陷型半赫斯勒化合物的本征缺陷結構與熱電輸運性質，概述了半赫斯勒熱電器件的最新研究成果，展望了半赫斯勒合金熱電材料與器件的發展趨勢。

Abstract:

Thermoelectric materials, as a promising class of energy materials, can realize the direct conversion between heat and electricity. Half-Heusler thermoelectric materials have attracted considerable attention for high-temperature thermoelectric conversion applications due to their excellent thermoelectric and mechanical properties, and good thermal stability. Here, The development of half-Heusler thermoelectric materials in the past two decades are reviewed. The thermoelectric transport mechanism and the strategies targeting the optimization of the thermoelectric performance in typical 18-electron half-Heusler materials, for instance, ZrNiSn, NbFeSb, ZrCoSb, etc., are introduced, and the intrinsic defects and transport properties of emerging defective half-Heusler material, represented by nominal 19-electron half-Heusler system, are discussed. The recent achievements of half-Heusler thermoelectric devices are presented. Finally, the development trends of half-Heusler thermoelectric materials and devices are prospected.