文章信息/Info

Title:

Study of New Thermal Interface Material-Nanosilver Paper

文章編號:

1674-3962(2025)04-0373-07

作者:

余翠娟; 葉益聰; 堵永國; 王震; 彭泳潛; 徐元曦

國防科技大學空天科學學院材料科學與工程系，湖南 長沙 410073

Author(s):

YU Cuijuan; YE Yicong; DU Yongguo; WANG Zhen; PENG Yongqian; XU Yuanxi

Department of Materials Science and Engineering, School of Aerospace Science，National University of Defense Technology， Changsha 410073, China

關鍵詞:

納米銀紙; 新型熱界面材料; 濕法造紙; 低溫燒結; 寬溫域服役; 大功率半導體

Keywords:

nano-silver paper;  new thermal interface materials;  wet papermaking;  low�瞭emperature sintering;  wide-temperature range service;  high-power semiconductor

分類號:

TM241;TB383

DOI:

10.7502/j.issn.1674-3962.202304023

文獻標志碼:

A

摘要:

第三代半導體材料具有禁帶寬度大、擊穿電場高、熱導率高等優異性能，滿足大功率器件向微型化、高性能、高組裝密度、高可靠性方向發展的性能要求，但傳統的界面材料已無法滿足器件的高散熱需求，研究與之匹配的新型熱界面材料迫在眉睫。采用濕法造紙技術將均勻分散的銀納米線溶液制備成一種兼具高純度、高導熱和高強度的納米銀紙，研究了納米銀紙熱壓燒結后的導熱性能和與基體的粘接強度，分析了熱壓燒結后納米銀紙的微觀形貌及剪切斷口形貌。結果表明，納米銀紙在250 ℃/10 MPa/10 min的條件下熱壓燒結后，組織致密，孔隙率<5%，熱阻≤0.8 mm2·K·W-1，與基體間的室溫剪切強度高達39 MPa，400 ℃高溫條件下剪切強度高達13 MPa。納米銀紙作為一種新型低溫燒結（≤250 ℃）、寬溫域服役（常溫~800 ℃）的熱界面材料，在大功率半導體器件的封裝中具有廣泛的應用前景。

Abstract:

The third generation semiconductor materials have excellent properties such as wide bandgap, high breakdown electric field and high thermal conductivity, which meet the performance requirements of high-power semiconductor dvices towards miniaturization, high performance, high packing density and high reliability. However, the traditional thermal interface materials can no longer meet the high heat dissipation requirements of the devices, so it is urgent to study a new type of thermal interface materials that matches it. A kind of nano-silver paper with high purity, high thermal conductivity and high strength was prepared from uniformly dispersed silver nanowire solution by wet papermaking technology. The thermal conductivity and shear strength of nano�瞫ilver paper after hot-pressing sintering were studied, and the micromorphology and shear fracture morphology of the nano�瞫ilver paper after hot-pressing sintering were analyzed. The results show that the nano�瞫ilver paper has compact structure at the hot-pressing sintering process of 250 ℃/10 MPa/10 min, porosity is less than 5%, thermal resistance is less than 0.8 mm2·K·W-1, the room temperature shear strength with the substrate is 39 MPa, the shear strength at 400 ℃ is 13 MPa. As the low-temperature sintering (≤250 ℃) and wide-temperature range service (room temperature~800℃) new thermal interface material, nano-silver paper has a wide application prospect in the packaging of high-power semiconductor devices.