文章信息/Info

Title:

Research Progress in Deformation Mechanism and Machining Technology of β-Ga2O3 Single Crystal Substrates

文章編號:

1674-3962(2025)02-0199-10

作者:

楊冉; 金竹; 馬可可; 夏寧; 張輝; 楊德仁

1．浙江大學 硅及先進半導體全國重點實驗室，浙江 杭州 310027 2．浙江大學材料科學與工程學院，浙江 杭州 310027 3．浙江大學 杭州國際科創(chuàng)中心,浙江 杭州 311200

Author(s):

YANG Ran;  JIN Zhu;  MA Keke;  XIA Ning;  ZHANG Hui;  YANG Deren

1. State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China 2. School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China et al.

關鍵詞:

氧化鎵單晶; 力學性能; 變形機理; 機械加工

Keywords:

β-Ga2O3 single crystal;  mechanical properties;  deformation mechanism; machining technology

分類號:

TN304.2+1

DOI:

10.7502/j.issn.1674-3962.202305014

文獻標志碼:

A

摘要:

β-Ga2O3是超寬禁帶半導體的代表性材料之一，在電子器件、深紫外光電子器件等方面有廣泛的應用前景。β-Ga2O3的力學性能在生長、襯底片加工以及器件制備過程中都有重要的影響。綜述了β-Ga2O3低溫和高溫的變形機理，包括主導塑性變形的位錯的滑移系和解理斷裂機制的總結分析，旨在全面認識β-Ga2O3的變形行為和機理，為其制備、加工和應用過程中遇到的變形相關問題給出指導；針對β-Ga2O3襯底片的加工過程，對切割、研磨和拋光過程中涉及到的變形機理和工藝探索進行了詳細介紹，討論了加工過程中主要存在的問題以及解決問題的方向。

Abstract:

β-Ga2O3 is one of the ultra-wide band gap semiconductors and has broad prospects in electronic devices and deep ultraviolet electronic devices.Mechanical properties of β-Ga2O3 play an important role in the crystal growth, substrate machining and device fabrication. In this paper, the deformation mechanism of β-Ga2O3 at low and high temperatures are reviewed, including the slip systems of dislocations with dominance of plastic deformation and cleavage fracture mechanism. This review may help fully understanding the deformation behavior and mechanical mechanism of β-Ga2O3, and providing guidance for overcoming the problems related to deformation during β-Ga2O3 growing, machining and application. The removal mechanism and process exploration of β-Ga2O3 substrate machining, including the cutting, grinding and polishing, are introduced in detail. The main problems in the machining process and the solving direction are discussed.