[1]崔國祥,李瑞,袁昌馳,等.人工智能驅動集成電路下一代互連材料設計:進展與挑戰[J].中國材料進展,2025,44(05):436-449.[doi:10.7502/j.issn.1674-3962.202409016]
CUI Guoxiang,LI Rui,YUAN Changchi,et al.AI-Driven Design of Next-Generation Interconnect Materials for Integrated Circuits: Progress and Challenges[J].MATERIALS CHINA,2025,44(05):436-449.[doi:10.7502/j.issn.1674-3962.202409016]
點擊復制
人工智能驅動集成電路下一代互連材料設計:進展與挑戰(
)
中國材料進展[ISSN:1674-3962/CN:61-1473/TG]
- 卷:
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44
- 期數:
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2025年05
- 頁碼:
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436-449
- 欄目:
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- 出版日期:
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2025-05-30
文章信息/Info
- Title:
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AI-Driven Design of Next-Generation Interconnect Materials for Integrated Circuits: Progress and Challenges
- 文章編號:
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1674-3962(2025)05-0436-14
- 作者:
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崔國祥; 李瑞; 袁昌馳; 吳蘊雯; 鞠生宏
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1. 上海交通大學, 材料科學與工程學院, 上海, 200240
2. 上海交通大學, 中英國際低碳學院, 上海, 201306
- Author(s):
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CUI Guoxiang; LI Rui; YUAN Changchi; WU Yunwen; JU Shenghong
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1. School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240
2. China-UK Low Carbon College, Shanghai Jiao Tong University, Shanghai 201306
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- 關鍵詞:
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互連材料; 二元合金; 拓撲半金屬; 二維材料; 人工智能
- Keywords:
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interconnect materials; binary alloys; topological semimetals; two-dimensional materials; artificial intelligence
- 分類號:
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TN405;TP18
- DOI:
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10.7502/j.issn.1674-3962.202409016
- 文獻標志碼:
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A
- 摘要:
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隨著芯片在通信、汽車電子與高性能計算等領域的深入應用,低功耗、高性能的芯片需求持續上升。在摩爾定律推動下,器件微型化帶來量子隧穿效應和布線電阻增加等挑戰,尤其在5 nm及以下工藝節點,芯片互連成為性能瓶頸。Cu互連面臨尺寸效應導致的電阻激增,推動對新型低電阻材料的探索。綜述了集成電路互連在先進節點下的核心挑戰,分析Co、Ru等替代金屬及二元合金、拓撲半金屬、二維材料的發展前景,并探討人工智能在互連材料設計中的應用,為工業界開發新一代互連材料提供參考路徑。
- Abstract:
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With the increasing integration of chips into communications, automotive electronics and high-performance computing, the demand for low-power and high-performance devices continues to grow. Driven by Moore’s Law, the device miniaturization presents critical challenges such as quantum tunneling effects and increased wiring resistance. With technology nodes of 5 nm and below, the interconnects have emerged as a key performance bottleneck. Particularly, the copper interconnects face significant resistance increases due to size effects, driving the search for novel low-resistivity materials. This review summarizes the major challenges of interconnect technology at advanced nodes. In details, the potential applications of alternative metals such as cobalt and ruthenium, binary alloys, topological semimetals and two-dimensional materials are evaluated. At the same time, we also explores the application of artificial intelligence in interconnect material design, providing strategic insights for the development of next-generation interconnect solutions in the semiconductor industry.
備注/Memo
- 備注/Memo:
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收稿日期:2024-09-16修回日期:2025-01-23
基金項目:上海市教委項目(2024AIZD012);上海市科委國際
合作領域項目(24160712600);國家自然科學基金
項目(22472095, 62004124, 52006134)
第一作者:崔國祥,男,2001年生,碩士研究生
通訊作者:鞠生宏,男,1986年生,副教授,博士生導師,
Email:shenghong.ju@sjtu.edu.cn
更新日期/Last Update:
2025-04-27